Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Performance Investigation on P-Type Si-, Ge-, and Ge–Si Core–Shell Nanowire Schottky Barrier Transistors

Performance Investigation of P-Type Ge- and Ge-Core/Si-Shell Junctionless Nanowire Transistors

DC and Analog/rf Comparisons of Si- and Ge- Nanowire Schottky Barrier Transistors

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure

Improving Electrical Performance in Ge–Si Core–shell Nanowire Transistor with a New Stripped Structure

Comparative Study of Dopant-Segregated Schottky Barrier Germanium Nanowire Transistors

A Comprehensive Study on Schottky Barrier Nanowire Transistors (Sb-Nwts): Principle, Physical Limits and Parameter Fluctuations

Study on Transport Characteristics of Silicon-Germanium Nanowire Mosfets with Core-Shell Structure

Numerical analysis on core-shell based GeSi nanowire MOSFETs

Investigation of the Carrier Velocity in Short Channel Ge MOSFET with NiGe Metal Source/Drain

GaAs-GaP core-shell nanowire transistors: A computational study

Performance Investigation on the Reconfigurable Si Nanowire Schottky Barrier Transistors

Performance Evaluation of GaAs–GaP Core–Shell-Nanowire Field-Effect Transistors

Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain

Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex P-Channel Gate-All-Around Nanowire Transistors

A Comparison Study Of Silicon Nanowire Transistor With Schottky-Barrier Source/Drain And Doped Source/Drain

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Si- and Ge-Based Electronic Devices

Physical Insights of Si-Core-SiGe-Shell Gate-All-Around Nanosheet pFET for 3 nm Technology Node