Abstract:Present work investigates the DC and Analog/RF characteristics such as the drain current ), Transconductance , Transconductance Generation Factor (TGF), Cut-off frequency , Frequency Transconductance Product (FTP), Transit time and the total resistance of the source region, drain region, and channel resistance for Dual Metal (DM) Inversion Mode (IM) and Junctionless (JL) Cylindrical Gate All Around (CGAA) Silicon nanowire (SiNW) MOSFETs with 5 nm gate length using Silvaco ATLAS 3D TCAD. In this work, the Non-Equilibrium Green's Function approach along with the self-consistent solution of Schrödinger's equation and Poisson's equation has been considered. The channel is taken to be lightly doped in the case of IM DM CGAA SiNW type of device. The effect of DM Gate work function engineering for SiNW channel of diameter 3 nm with gate oxide the thickness of 0.8 nm on , , TGF, , , FTP and has been studied. Moreover, a comparative study has been made between IMDM and JLDM CGAA SiNW devices with the above-mentioned parameters. For the JL device, the optimization of doping concentration is performed to get the same (i) I ON current and (ii) threshold voltage (V TH ) as the IM device. About 3.09 times and 21.89 times reduction in I OFF is seen for the same I ON and V TH optimized devices respectively as compared to IM device. It has been found that DM Gate variation minimizes drain-induced barrier lowering (DIBL) in IM and JL devices. The JL SiNW showed much lower DIBL ~ 16.46 mV/V, a near ideal SS ~ 60 mV/dec, and higher current ratio ~ 7.04 × 10 8 which is much better as compared to those reported in the literature for cylindrical gate all around (CGAA) devices. Also, it is found that the JL SiNW device performs better than IM in terms of SS, DIBL, , TGF, f T , , FTP and .

DC and Analog/rf Comparisons of Si- and Ge- Nanowire Schottky Barrier Transistors

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Performance Investigation on P-Type Si-, Ge-, and Ge–Si Core–Shell Nanowire Schottky Barrier Transistors

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Performance Estimations of Gate-All-around Silicon Nanowire FETs with Asymmetric Barrier Heights at Source/drain

A Comparison Study Of Silicon Nanowire Transistor With Schottky-Barrier Source/Drain And Doped Source/Drain

Performance Investigation of P-Type Ge- and Ge-Core/Si-Shell Junctionless Nanowire Transistors

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex P-Channel Gate-All-Around Nanowire Transistors

Si- and Ge-Based Electronic Devices

Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation

DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node

Improving Electrical Performance in Ge–Si Core–shell Nanowire Transistor with a New Stripped Structure

Performance Investigation on the Reconfigurable Si Nanowire Schottky Barrier Transistors

Germanium Based Field-Effect Transistors: Challenges and Opportunities

A Comprehensive Study on Schottky Barrier Nanowire Transistors (Sb-Nwts): Principle, Physical Limits and Parameter Fluctuations