High Performance Tri-Gate Germanium-on-insulator Based Junctionless Nanowire Transistors
Chuanchuan Sun,Ren Rong Liang,Jing Wang,Jun Xu
DOI: https://doi.org/10.1149/ma2016-01/23/1199
2016-01-01
Abstract:With feature size of transistors reducing down to sub-20 nm nodes, high mobility channel materials and novel device structures are critical to further improve the performance of transistors. Junctionless nanowire transistor (JNT) is recently proposed and regarded as promising candidate structure due to its simple fabrication process and excellent electronic properties [1]. Germanium-on-insulator (GOI) substrate is regarded as promising substrate due to its advantages of both Ge and on-insulator substrates. Although GOI-based JNTs have been reported [2,3], the performances are far from satisfactory. In this work, we fabricated high performance GOI-based JNTs with much smaller dimensions, where channel length and width are both less than 100 nm, and demonstrated their fabrication process and electrical properties in detail. Fig.1 shows SEM images of tri-gate JNTs with different dimension, (a)W/L=40nm/70nm and (b) W/L=40nm/100nm, respectively. Fig.2 shows TEM image of a GOI sample with T ge =10 nm. The original thickness of Ge film was about 50 nm. We reduced T ge down to 10 nm using a simple wet retching method as reported in our previous work [4]. Fig.3 shows the schematic diagrams of fabrication process. To reduce costs and improve efficiency, we used both optical lithography (OL) and electron beam lithography (EBL). First, we used OL to define active region of the devices. GeO 2 channel passivation was carried out by ozone oxidation at 300 °C for 30 min. Then EBL was carried out to define the channel and gate electrode, which had much smaller dimensions. Finally, we used OL and lift-off process to define measuring electrodes. Fig.4 (a) shows I d -V g characteristics of JNTs with T ge =20nm and T ge =10nm, respectively. It can be observed that I on /I off ratio of the JNT with T ge =10nm is larger than 10 5 at V d = -1V. The subthreshold slope at V d = -0.1V and the drain induced-barrier lowering (DIBL) are estimated to be 110 mV/dec and 140 mV/V, respectively. With decrease of T ge , we get better device performance. Fig.4 (b) shows the I d -V d characteristics of JNT with W/L=40nm/70nm, N a =10 18 cm -3 and T ge =10nm. Liner and saturation regions are clearly exhibited. Fig.5 (a) shows the influence of temperature on I d -V g characteristics of JNTs with W/L=40nm/70nm, N a =10 18 cm -3 and T ge =10nm. It can be observed that with increase of temperature leakage current increased dramatically. Fig.5 (b) shows mobility of the same JNT. The reported mobility values of a GOI JNT with N a = 10 19 cm −3 [2] and a conventional Si pMOSFET [5] are also plotted for comparison. The peak mobility is larger than 200 cm 2 V -1 S -1 , which is close to that of bulk germanium with a doping concentration of 10 18 cm −3 . In summary, we fabricated high performance GOI-based JNTs using a Si-compatible process which combines OL and EBL. Good I on /I off ratio, subthreshold slope, DIBL and mobility are extracted, which indicating that ultra-thin body GOI-based JNTs are promising for high performance circuits. The device performance can be improved by optimizing the fabrication process and device structure. Acknowledgments: This work was supported in part by the National Natural Science Foundation of China (No. 61306105). [1] J. P. Colinge et.al, Nat. Nanotechnol. 5, 225, 2010. [2] D. D. Zhao et al. Jpn. J. Appl. Phys., Part 1, 51, 04DA03, 2012. [3] R. Yu et al., Phys. Status Solidi RRL 8, 65, 2014. [4] C. Sun et al. ECS Solid State Lett. 4, P43, 2015. [5] S. Takagi et al, IEEE Trans. Electron Devices, 41,2363, 1994. Figure 1