Abstract:We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) can change with decreasing temperature from +20 °C to −180 °C. This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform. Firstly, when the temperature drops from +20 °C to −140 °C, the increased carrier mobility drives a slight increase in transient amplitude. However, as the temperature decreases further below −140 °C, the carrier freeze-out brings about an inflection point, which means the transient amplitude will decrease at cryogenic temperatures. To better understand this result, we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt’s new incomplete ionization model. The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional (2D) TCAD process simulation. In addition, we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions. The increase of the emitter–base junction’s barrier height at low temperatures could suppress this electron-injection phenomenon. We have also optimized the built-in voltage equations of a high current compact model (HICUM) by introducing the impact of incomplete ionization. The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures, and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

Cryogenic Characteristics of Ge Channel Junctionless Nanowire Transistors

High Performance Tri-gate Germanium-on-insulator Based Junctionless Nanowire Transistors

Leakage Current Of Germanium-On-Insulator-Based Junctionless Nanowire Transistors

Effect of traps and defects on high temperature performance of Ge channel junctionless nanowire transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

Performance Investigation of P-Type Ge- and Ge-Core/Si-Shell Junctionless Nanowire Transistors

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Low-Temperature Behavior of Single-Wall Carbon Nanotube Gate-all-Around Field-Effect Transistors

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing

Investigation of Cryogenic Current-Voltage Anomalies in SiGe HBTs: Role of Base-Emitter Junction Inhomogeneities

Highly Temperature-Stable Carbon Nanotube Transistors and Gigahertz Integrated Circuits for Cryogenic Electronics

Investigation of cryogenic current–voltage anomalies in SiGe HBTs: Role of base–emitter junction inhomogeneities

Fast Thermodynamic Study on a Silicon Nanotransistor at Cryogenic Temperatures

Investigations of Junctionless Nanowire Transistors with Non-Uniform Channel

Low-temperature characteristics and gate leakage mechanisms of LPCVD-SiN<i>x</i>/AlGaN/GaN MIS-HEMTs

Investigation of Analog/RF behaviour of Asymmetrical Gate Tunnel FET at Cryogenic temperatures

Suppression of Tunneling Leakage Current in Junctionless Nanowire Transistors