Abstract:The deviations of cryogenic collector current–voltage characteristics of SiGe heterojunction bipolar transistors (HBTs) from ideal drift-diffusion theory have been a topic of investigation for many years. Recent work indicates that direct tunneling across the base contributes to the non-ideal current in highly scaled devices. However, cryogenic discrepancies have been observed even in older-generation devices for which direct tunneling is negligible, suggesting that another mechanism may also contribute. Although similar non-ideal current–voltage characteristics have been observed in Schottky junctions and were attributed to a spatially inhomogeneous junction potential, this explanation has not been considered for SiGe HBTs. Here, we experimentally investigate this hypothesis by characterizing the collector current ideality factor and built-in potential of a SiGe HBT vs temperature using a cryogenic probe station. The temperature dependence of the ideality factor and the relation between the built-in potential as measured by capacitance–voltage and current–voltage characteristics are in good qualitative agreement with the predictions of a theory of electrical transport across a spatially inhomogeneous junction. These observations suggest that inhomogeneities in the base–emitter junction potential may contribute to the cryogenic non-idealities. This work helps to identify the physical mechanisms limiting the cryogenic microwave noise performance of SiGe HBTs.

What problem does this paper attempt to address?

The paper primarily investigates the anomalous current-voltage characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) at low temperatures and attempts to identify the root causes of these non-ideal behaviors. Specifically, the research team focuses on the deviations from the ideal drift-diffusion theory exhibited by SiGe HBTs at low temperatures (below approximately 77 K), particularly in cases where the ideality factor of the collector current significantly exceeds 1. This phenomenon directly impacts the microwave noise performance of SiGe HBTs at low temperatures, as the microwave noise temperature is directly related to this ideality factor. The study proposes a hypothesis that the potential inhomogeneity of the base-emitter junction might be one of the causes of these non-ideal characteristics. To verify this hypothesis, the researchers experimentally measured the ideality factor of the collector current and the built-in potential of SiGe HBTs at different temperatures and compared these data with theoretical predictions regarding spatially inhomogeneous junctions. The results show that the temperature dependence of the experimentally measured ideality factor and the relationship between the built-in potential derived from capacitance-voltage (C-V) and current-voltage (I-V) characteristics are consistent with theoretical predictions. Therefore, the problem the paper attempts to address can be summarized as: investigating the causes of non-ideal current-voltage characteristics of SiGe HBTs at low temperatures, particularly exploring whether the potential inhomogeneity of the base-emitter junction is one of the factors leading to this phenomenon. Through the consistency between experimental results and theoretical analysis, the paper supports the view that potential inhomogeneity may be an important factor contributing to the non-ideal current-voltage characteristics at low temperatures.

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