Abstract:The single-event transient response of a high-voltage complementary SiGe-on-silicon-on-insulator technology is investigated along with its temperature dependence using a pulse laser. The p-n-p silicon-germanium heterojunction bipolar transistor (SiGe HBT) shows a larger transient peak amplitude compared to the n-p-n SiGe HBT, which is largely related to the differences in total device volume and peak germanium content between the p-n-p and n-p-n devices. The effects of temperature on the transient response are also investigated using heaters and sensors mounted directly on the device-under-test package. The collector transient peak amplitude shows a negative temperature coefficient for a <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> of 0-V condition, for both the n-p-n and p-n-p devices. However, the temperature dependence of the transient peak amplitude becomes significantly weaker at <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}>0$ </tex-math></inline-formula> V. Calibrated TCAD simulations were performed to better understand the temperature dependence, and the simulations indicated that the electric field and mobility at higher <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> have a reduced temperature dependence than at a <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> of 0 V. The effects of self-heating are also explored using TCAD simulations and show that even under aggressive self-heating conditions, there is only less than 10% reduction in transient peak amplitude with the self-heating models turned on. The results shown suggest that this particular SiGe technology can be used for environments where highly energetic particles and high temperatures are encountered simultaneously.

Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Transient Electrothermal Analysis of Interconnects in the Presence of a ESD pulse

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs

Electro-Thermal analysis of SiGe HBT under HPM Injection

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Electrothermal Model of SiC Power BJT

The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment*

Advanced Electro-Thermal Spice Modelling of Large Power Igbts

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

3-D Simulation Study of Single Event Effects of SiGe Heterojunction Bipolar Transistor in Extreme Environment

A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit

Energy Transport Model of Scaling SiGe HBT

Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver

Igbt Junction Temperature Measurement Via Combined Tseps with Collector Current Impact Elimination

Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation

Simulation of Substrate Contact Effects on Heavy Ion-Induced Current Transient in SiGe HBT