Abstract:The single-event transient response of a high-voltage complementary SiGe-on-silicon-on-insulator technology is investigated along with its temperature dependence using a pulse laser. The p-n-p silicon-germanium heterojunction bipolar transistor (SiGe HBT) shows a larger transient peak amplitude compared to the n-p-n SiGe HBT, which is largely related to the differences in total device volume and peak germanium content between the p-n-p and n-p-n devices. The effects of temperature on the transient response are also investigated using heaters and sensors mounted directly on the device-under-test package. The collector transient peak amplitude shows a negative temperature coefficient for a <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> of 0-V condition, for both the n-p-n and p-n-p devices. However, the temperature dependence of the transient peak amplitude becomes significantly weaker at <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}>0$ </tex-math></inline-formula> V. Calibrated TCAD simulations were performed to better understand the temperature dependence, and the simulations indicated that the electric field and mobility at higher <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> have a reduced temperature dependence than at a <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> of 0 V. The effects of self-heating are also explored using TCAD simulations and show that even under aggressive self-heating conditions, there is only less than 10% reduction in transient peak amplitude with the self-heating models turned on. The results shown suggest that this particular SiGe technology can be used for environments where highly energetic particles and high temperatures are encountered simultaneously.

The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

Investigation of Base Transport Mechanism in Silicon-Germanium Heterojunction Bipolar Transistor Operating over Wide Temperature Range

Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation

Operation of Silicon-Germanium Heterojunction Bipolar Transistors with Different Structures at Deep Cryogenic Temperature.

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium Between 0.05 and 1 K

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment*

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET)

Investigation of laser-induced single event effect on SiGe BiCMOS low noise amplifiers

Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation

The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs