Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs

Mario Weiß,Amit Kumar Sahoo,Cristian Raya,Marco Santorelli,Sébastien Fregonese,Cristell Maneux,Thomas Zimmer

DOI: https://doi.org/10.48550/arXiv.1304.1781

2013-04-06

Abstract:This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~300GHz and ~400GHz, respectively. Thermal coupling parameters are extracted using three dimensional (3D) thermal TCAD simulations. The obtained parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between emitter fingers. Very good agreement is achieved between circuit simulations and DC measurements carried out on an in house designed test structure.

Mesoscale and Nanoscale Physics,Instrumentation and Detectors

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the internal thermal coupling problem in multi - finger SiGe:C heterojunction bipolar transistors (HBTs). Specifically, the research aims to:

1. **Understand the thermal coupling mechanism**: Explore the temperature rise phenomenon in multi - emitter SiGe:C HBTs due to self - heating and thermal coupling between adjacent emitters. This thermal coupling will affect the performance and reliability of the device, especially in high - frequency and high - power applications.

2. **Extract thermal coupling parameters**: Through three - dimensional (3D) thermal transport computer - aided design (TCAD) simulations, extract the key parameters that describe the thermal coupling effect. These parameters are crucial for establishing an accurate electro - thermal model.

3. **Construct a distributed transistor model**: Apply the extracted thermal coupling parameters to a distributed transistor model, which takes into account not only the self - heating effect but also the mutual thermal coupling between emitters. In this way, the temperature distribution and performance changes of the device under actual working conditions can be predicted more accurately.

4. **Verify the validity of the model**: Verify the accuracy of the proposed electro - thermal model by comparing it with the direct - current measurement results on a self - made test structure. The experimental results show that there is very good consistency between circuit simulation and actual measurement data, which proves the effectiveness and practicality of this method.

In summary, the main goal of this paper is to deeply study and model the thermal coupling effect in multi - finger SiGe:C HBTs through a combination of experiments and simulations, thereby providing a more accurate electro - thermal model for the design of high - frequency and high - power integrated circuits. This helps to improve the performance prediction and reliability assessment of next - generation non - linear radio - frequency (RF) circuits.

Formula representation:
- The self - heating effect can be described by the following formula:
\[
P_{self}=I^{2}R
\]
where \(P_{self}\) is the self - heating power, \(I\) is the current, and \(R\) is the resistance.

- The thermal coupling effect can be described by a thermal resistance network. For example, the thermal coupling coefficient \(C_{ij}\) between two emitters can be expressed as:
\[
T_{i}=T_{j}+C_{ij}\cdot P_{j}
\]
where \(T_{i}\) and \(T_{j}\) are the temperatures of emitters \(i\) and \(j\) respectively, \(P_{j}\) is the power consumption of emitter \(j\), and \(C_{ij}\) is the thermal coupling coefficient.

Through these studies, researchers can better understand and optimize the thermal management of multi - finger SiGe:C HBTs, thereby enhancing their performance in high - frequency and high - power applications.