Abstract:The single-event transient response of a high-voltage complementary SiGe-on-silicon-on-insulator technology is investigated along with its temperature dependence using a pulse laser. The p-n-p silicon-germanium heterojunction bipolar transistor (SiGe HBT) shows a larger transient peak amplitude compared to the n-p-n SiGe HBT, which is largely related to the differences in total device volume and peak germanium content between the p-n-p and n-p-n devices. The effects of temperature on the transient response are also investigated using heaters and sensors mounted directly on the device-under-test package. The collector transient peak amplitude shows a negative temperature coefficient for a <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> of 0-V condition, for both the n-p-n and p-n-p devices. However, the temperature dependence of the transient peak amplitude becomes significantly weaker at <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}>0$ </tex-math></inline-formula> V. Calibrated TCAD simulations were performed to better understand the temperature dependence, and the simulations indicated that the electric field and mobility at higher <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> have a reduced temperature dependence than at a <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> of 0 V. The effects of self-heating are also explored using TCAD simulations and show that even under aggressive self-heating conditions, there is only less than 10% reduction in transient peak amplitude with the self-heating models turned on. The results shown suggest that this particular SiGe technology can be used for environments where highly energetic particles and high temperatures are encountered simultaneously.

Characterization of mutual heating inside a SiGe ring oscillator

Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs

Characterization of 0.18μm CMOS Ring Oscillator at Liquid Helium Temperature

Fabrication and Characterization of High Speed SOI MOS Devices and Ring-Oscillators

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Optoelectronic Oscillator Based on a Silicon Microring Modulator

0.18Μm CMOS Ring Oscillator at Liquid Helium Temperature

Photonic-Assisted Microwave Frequency Measurement System Based on A Silicon Orr

Photonic and Thermal Modelling of Microrings in Silicon, Diamond and GaN for Temperature Sensing

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology

Investigation of Transient Two-Stage Thermal Equivalent RC Network of SOI-MOSFETs Using Nano Double-Pulse Measurement

Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors

Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation

Performance analysis of heterojunction tunnel FET device with variable Temperature

Modeling of Circuits with Strongly Temperature Dependent Thermal Conductivities for Cryogenic CMOS

Characterization and Modelling of Mosfet Operating at Cryogenic Temperature for Hybrid Superconductor-Cmos Circuits

Room temperature 0.1 /spl mu/m CMOS technology with 11.8 ps gate delay

Research for SiGe HBT

Measurement of Thermal Parameters of SiC MOSFET Module by Case Temperature

Characterization of Reliabilities of 22 Nm UTBB FDSOI Ring Oscillators