Abstract:Due to the outstanding material properties, silicon carbide (SiC) power device is the most promising alternative to silicon devices and can work at higher junction temperature. However, existing packaging technologies obstruct the use of SiC devices at high temperature and impede the continued exploration of SiC devices in high-temperature applications. This article proposes a novel hermetic metal packaging method called compact-interleaved package. The compact-interleaved power module handles the mentioned problems from three key considerations: packaging parasitic parameters, direct electrode measurement structure, and packaging materials. Based on the elaborate high-temperature double pulse test platform, dynamic characteristics of 1.2-kV/13-mΩ 4H-SiC power mosfet are studied under the condition of extremely high junction temperature (up to 550 °C) and extremely high switching speed (about 3 kA/μs). The dynamic characteristics of SiC mosfet are theoretically analyzed and verified by experimental measurements. Compared with other SiC bipolar devices, SiC mosfet maintains outstanding dynamic characteristics at extremely high temperatures and has an optimal operating high-temperature range. Finally, this article demonstrates an extreme-high-temperature power electronic converter to verify the superiority of the packaging method, and also proves the extreme-high-temperature power converting capability of SiC mosfet.

Electrical Characterization of 1.2kv SiC MOSFET at Extremely High Junction Temperature

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Electrical Performances and Physics Based Analysis of 10kv SiC Power MOSFETs at High Temperatures

Junction temperature dynamics of power MOSFET and SiC diode

Short-Circuit Characterization and Protection of 10-kV SiC mosfet

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

A high temperature de-saturation protection and under voltage lock out circuit for SiC MOSFET

Short Circuit Capability and Short Circuit Induced $v_{\mathrm{th}}$ Instability of a 1.2-Kv SiC Power MOSFET

High Temperature Stability and the Performance Degradation of SiC MOSFETs

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

High Temperature Characterization of Sicbjts for Power Switching Applications

Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

High temperature stability evaluation of SiC MOSFETs

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

High-temperature Characteristics of SiC Module and 100 Kw SiC AC-DC Converter at a Junction Temperature of 180 °C