Abstract:Due to the outstanding material properties, silicon carbide (SiC) power device is the most promising alternative to silicon devices and can work at higher junction temperature. However, existing packaging technologies obstruct the use of SiC devices at high temperature and impede the continued exploration of SiC devices in high-temperature applications. This article proposes a novel hermetic metal packaging method called compact-interleaved package. The compact-interleaved power module handles the mentioned problems from three key considerations: packaging parasitic parameters, direct electrode measurement structure, and packaging materials. Based on the elaborate high-temperature double pulse test platform, dynamic characteristics of 1.2-kV/13-mΩ 4H-SiC power mosfet are studied under the condition of extremely high junction temperature (up to 550 °C) and extremely high switching speed (about 3 kA/μs). The dynamic characteristics of SiC mosfet are theoretically analyzed and verified by experimental measurements. Compared with other SiC bipolar devices, SiC mosfet maintains outstanding dynamic characteristics at extremely high temperatures and has an optimal operating high-temperature range. Finally, this article demonstrates an extreme-high-temperature power electronic converter to verify the superiority of the packaging method, and also proves the extreme-high-temperature power converting capability of SiC mosfet.

A high temperature de-saturation protection and under voltage lock out circuit for SiC MOSFET

High Temperature Gate Drive Circuit With Under Voltage Lock Out

A High Temperature Gate Drive Circuit for SiC MOSFET

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

High Current Gate Drive Circuit with High Temperature Potential for SiC MOSFET Module

High Temperature Stability and the Performance Degradation of SiC MOSFETs

Short-Circuit Characterization and Protection of 10-kV SiC mosfet

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Electrical Characterization of 1.2kv SiC MOSFET at Extremely High Junction Temperature

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module