Characterization of Threshold Voltage Shift in SiC MOSFETs Under Nanosecond-Range Switching and Its Impact on High- Frequency Applications
Junsong Jiang,Xi Tang,Kun Tan,Zhihao Hu,Mohan Tian,Yichen Xu,Haoran Li,Wenjie Zhu,Hui Li,Cungang Hu,Wenping Cao
DOI: https://doi.org/10.1109/ted.2024.3403956
IF: 3.1
2024-06-21
IEEE Transactions on Electron Devices
Abstract:Dynamic threshold voltage shifts (DTVS) in silicon carbide (SiC) MOSFETs are investigated using an ultrafast characterization method that incorporates nanosecond-range switching. A positive gate bias causes a positive DTVS and a negative gate bias causes a negative DTVS, which is observed within a timescale range of 40 ns–1 s. At a gate bias of −10 V, the negative DTVS can reach approximately −4 V, which changes the threshold voltage from positive to negative. A mechanism involving carrier trapping at/near the SiO2 /SiC interface is proposed. Then, the impact of DTVS on dynamic behavior is evaluated by a double-pulse test (DPT) under different off-state gate biases ( ). A negative DTVS causes the channel turn-on earlier, increasing the current overshoot ( ) during the turn-on process. As decreases from 0 to −10 V, the turn-on loss ( ) increases by 11.2% at a load current of 10 A. Moreover, the changes from an increase to a decrease when the turn-on gate resistance ( ) increases from 10 to . Therefore, for a specific gate driving condition, an optimized can be chosen to compromise the DTVS-induced change.
engineering, electrical & electronic,physics, applied