Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Comparative Study on Reliability and Application Features of SiC MOSFET

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Cryogenic and high temperature performance of 4H-SiC power MOSFETs

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications

Electrical Performances and Physics Based Analysis of 10kv SiC Power MOSFETs at High Temperatures

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module

High-temperature Characteristics of SiC Module and 100 Kw SiC AC-DC Converter at a Junction Temperature of 180 °C

Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance

Modeling of SiC MOSFET with temperature dependent parameters and its applications

Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

Dispersion analysis of dynamic and static characteristic parameters of 1200V SiC MOSFET