Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Comparison of 1700-V SiC-MOSFET and Si-IGBT Modules Under Identical Test Setup Conditions

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance

Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Discovery of Loss Imbalance in SiC Half-Bridge Power Modules – Analysis and Validations

Comparing the State-of-the-Art SiC MOSFETs: Test results reveal characteristics of four major manufacturers? 900-V and 1.2-kV SiC devices

Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications

1700 V full-SiC half-bridge power module with low switching loss

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Comparisons of SiC and Si devices for PMSM drives