Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Discovery of Loss Imbalance in SiC Half-Bridge Power Modules – Analysis and Validations

Analytical Calculation of the Residual ZVS Losses of TCM-Operated Single-Phase PFC Rectifiers

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

1700 V full-SiC half-bridge power module with low switching loss

Temperature Dependent Reverse Recovery Characterization of SiC MOSFETs Body Diode forSwitching Loss Estimation In a Half-Bridge

Analysis and Mitigation on Mismatch-induced Spurious Gate-source Voltages in SiC Bridge-leg Power Modules with Kelvin Sources

A Method Proposed for Calculating the Switching Loss of SiC MOSFET in Half Bridge Circuit

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

A Novel SiC MOSFET Module for High-power Soft-switching Converter

A Quasi-Two-Level Medium-Voltage SiC MOSFET Power Module with Low Loss and Voltage Self-Balance

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

A Double-Sided Cooling 6.5kv SiC MOSFET Power Module with Insulation Enhancement Design

A Semiphysical Semibehavioral Analytical Model for Switching Transient Process of SiC MOSFET Module

Flexible Epoxy Resin Substrate Based 1.2 Kv SiC Half Bridge Module with Ultra-low Parasitics and High Functionality

Analysis and Optimization of High-Frequency Switching Oscillation Conducted CM Current Considering Parasitic Parameters Based on a Half-Bridge Power Module

Design and Current Balancing Optimization of A 1700V/1000A Multi-chip SiC Power Module

A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization