Abstract:Triangular-current-mode (TCM) modulation guarantees zero-voltage-switching across the mains cycle in AC-DC power converters, eliminating hard-switching with a minor ${\approx} {30}{\%}$ penalty in conduction losses over the conventional continuous current mode (CCM) modulation scheme. TCM-operated converters, however, include a wide variation in both switching frequency and switched current across the mains cycle, complicating an analytical description of the key operating parameters to date. In this work, we derive an analytical description for the semiconductor bridge-leg losses in a TCM AC-DC converter, including the rms current and/or conduction losses, switching frequency, and switching losses. For SiC mosfets, we introduce a new loss model for switching losses under zero-voltage-switching, which we call “residual ZVS losses”. These losses include the constant $C_\text{oss}$ losses found in previous literature but must also add, we find, turn-off losses that occur at high switched currents. The existence and modeling of these turn-off losses, which are due to currents flowing through the Miller capacitance and raise the inner gate source voltage to the threshold level and accordingly limit the voltage slew rate, are validated on the IMZA65R027M1H 650V SiC mosfet. The complete loss model – and the promise of TCM for high power density and high efficiency – is validated on a 2.2 kW hardware bridge-leg demonstrator, which achieves a peak 99.6$\%$ semiconductor efficiency at full load. The proposed, fully-analytical model predicts bridge-leg losses with only 12$\%$ deviation at the nominal load, accurately including residual ZVS losses across load, modulation index, and external gate resistance.

Temperature Dependent Reverse Recovery Characterization of SiC MOSFETs Body Diode forSwitching Loss Estimation In a Half-Bridge

Analytical Calculation of the Residual ZVS Losses of TCM-Operated Single-Phase PFC Rectifiers

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery over an Extremely Wide High-Temperature Range

TCAD Modeling of Temperature-Dependent Reverse Recovery Characteristics of 1.2-Kv SiC MOSFETs’ Body Diode

Verification and Application of an Analytical Switching Loss Model for a SiC MOSFET and Schottky Diode Half-Bridge

An Analytical Switching Loss Model for a SiC MOSFET and Schottky Diode Half-Bridge Based on Nonlinear Differential Equations

A Method Proposed for Calculating the Switching Loss of SiC MOSFET in Half Bridge Circuit

Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions

Analysis on Reverse Recovery Characteristic of SiC MOSFET Intrinsic Diode

Accurate Time-segmented Loss Model for SiC MOSFETs in Electro-thermal Multi-Rate Simulation

Accurate Analytical Switching-On Loss Model of SiC MOSFET Considering Dynamic Transfer Characteristic and <i>Q</i><sub>gd</sub>

A Semiphysical Semibehavioral Analytical Model for Switching Transient Process of SiC MOSFET Module

Analytical Methodology for Loss Calculation of SiC MOSFETs

Inaccurate Switching Loss Measurement of SiC MOSFET Caused by Probes: Modelization, Characterization, and Validation

Discovery of Loss Imbalance in SiC Half-Bridge Power Modules – Analysis and Validations

Mechanism Segmentation Transient Model of SiC MOSFETs for Multi-rate Electro-thermal Simulation

Switching Losses Model of SiC MOSFET

Modeling of SiC MOSFET with temperature dependent parameters and its applications

Understanding switching losses in SiC MOSFET: Toward lossless switching

Evaluation of Reverse Recovery Characteristic of Silicon Carbide Metal–oxide–semiconductor Field-Effect Transistor Intrinsic Diode