Verification and Application of an Analytical Switching Loss Model for a SiC MOSFET and Schottky Diode Half-Bridge

J. Biela,Anliang Hu
DOI: https://doi.org/10.23919/IPEC-Himeji2022-ECCE53331.2022.9807184
2022-05-15
Abstract:This paper investigates the accuracy of a comprehensive analytical switching loss model (benchmark model) for a SiC MOSFET and Schottky diode half-bridge over a wide operating range using devices from different manufacturers. The model on average shows an error of 8.63% for turn-on losses and 7.68% for turn-off losses. In addition, the benchmark model is applied to analyze the possible accuracy improvement by using measured device characteristics instead of data sheet information. Furthermore, commonly used assumptions/simplifications in the literature for deriving analytical switching loss models are categorized, and their impact on the accuracy of switching loss models is evaluated based on the benchmark model.
Engineering,Physics
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