Zongjian Li,Jun Wang,Bing Ji,Z. John Shen
Abstract:Si/SiC hybrid switches of parallel Si insulated-gate bipolar transistor (IGBT) and SiC metal–oxide–semiconductor field-effect transistor (mosfet) offer most of the SiC benefits but at a much lower cost in comparison to a full SiC solution. The hybrid switch can be optimized to achieve a minimum total power loss while utilizing the smallest SiC chip size without exceeding the specified maximum junction temperature. In this article, we first develop a generalized power loss model for Si/SiC hybrid switches with total power loss and junction temperature as outputs and SiC device size as a continuous input variable, and then develop a methodology to minimize SiC device size while optimizing total IGBT/mosfet power loss and ensuring maximum junction temperature still below 150 °C. The power loss model is experimentally validated through both simple double pulse testing and a dc–dc buck converter case study. Using the model and optimization methodology, a minimum SiC device size can be obtained with optimized power loss and safe operation temperature.
What problem does this paper attempt to address?
The paper primarily focuses on addressing the optimization design issues of Silicon Carbide (SiC) hybrid switches in power electronics applications, aiming to achieve the lowest total power loss while using the smallest SiC chip size, and ensuring that the maximum junction temperature of both devices does not exceed a specified value (such as 150°C). Specifically, a universal power loss model has been developed, which takes the size of SiC devices as a continuous input variable, and outputs the total power loss and junction temperature. Through this model, the paper further proposes a methodology to optimize the size of SiC devices to minimize the total power loss of IGBT/MOSFETs while ensuring that the maximum junction temperature is controlled within a safe range.
The paper begins with a detailed introduction of the structure of hybrid switches, which are composed of high-current Si IGBTs and low-current SiC MOSFETs in parallel, utilizing the advantages of both to reduce conduction losses. Then, the paper discusses the impact of gate signal patterns on the switching losses of hybrid switches, defines the switch delay time parameters (Ton_delay and Toff_delay), and discusses their effects on the total switching power loss and maximum junction temperature.
In the power loss model section, the paper analyzes conduction losses, turn-on switching losses, and turn-off switching losses separately. For conduction losses, the model considers the conduction characteristics and temperature coefficients of SiC MOSFETs and IGBTs; for switching losses, the paper proposes empirical formulas based on nonlinear approximation methods, while also considering the hard switching losses of SiC MOSFETs and IGBTs and how these losses vary with chip area. Additionally, the paper establishes a thermal impedance model to reflect the impact of the SiC MOSFET chip area on its thermal resistance.
Finally, the paper validates the proposed power loss model through experiments, including simple double pulse tests and a case study of a DC/DC buck converter, proving the model's effectiveness and accuracy. With the model and optimization method, a minimum SiC device size can be determined that optimizes power loss while ensuring a safe operating temperature. This helps to find the optimal balance between cost-effectiveness and performance, thereby promoting the widespread application of SiC hybrid switches in the field of power electronics.