Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements

Sanghyun Lee,Masayuki Hashisaka,Takafumi Akiho,Kensuke Kobayashi,Koji Muraki
DOI: https://doi.org/10.1063/5.0036419
2021-02-24
Abstract:We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics of our homemade HEMT leads to a lower noise floor in the experimental setup and enables more efficient current-noise measurement than is available with a commercial HEMT. We present the dc transport properties of the HEMT and the gain and noise characteristics of the amplifier. With the amplifier employed for current-noise measurements in a quantum point contact, we demonstrate the high resolution of the measurement setup by comparing it with that of the conventional one using a commercial HEMT.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is how to measure the current noise in mesoscopic devices more efficiently and accurately under extremely low - temperature conditions. Specifically, the authors developed a low - temperature amplifier based on a self - made GaAs high - electron - mobility transistor (HEMT) for current - noise measurement at dilution - refrigerator temperatures. Compared with commercial HEMTs, this self - made GaAs HEMT has lower noise characteristics, which results in a lower noise floor of the experimental setup and enables more effective current - noise measurement. ### Main problems 1. **Technical difficulties**: The power - spectral density (PSD) of the current noise in mesoscopic devices is very small (usually below \(10^{-28} \, \text{A}^2/\text{Hz}\)), and it is difficult to measure with a standard ammeter. 2. **Limitations of existing solutions**: Although previous studies have achieved current - noise measurement with high resolution at 4.2 K using commercial HEMTs, further improving the resolution is crucial for detecting new mesoscopic phenomena (such as anyon correlations in the fractional quantum Hall system and violations of Bell's inequality in electron interferometers). ### Solutions The authors designed and fabricated a self - made HEMT based on a GaAs/AlGaAs heterostructure. By optimizing the gate pattern to obtain a high transconductance \(g_m\), low - noise characteristics were achieved. They integrated this HEMT into a low - temperature common - source (CS) amplifier and verified its performance in the following ways: - Calibrating the measurement system using the Johnson - noise thermometry method. - Performing current - noise measurements on quantum - point contacts (QPCs), demonstrating high resolution. ### Experimental results - The noise floor of the self - made GaAs HEMT is approximately three times lower than that of commercial HEMTs, increasing the measurement efficiency by about 9 times. - In the autocorrelation measurement, the resolution of the system reaches \(GSI_{in}=0.52\times 10^{-29} \, \text{A}^2/\text{Hz}\), which is significantly better than previously reported results. ### Conclusion By using the self - made low - temperature GaAs HEMT amplifier, the authors have successfully solved the technical problem of current - noise measurement in mesoscopic devices at extremely low temperatures, providing higher measurement accuracy and efficiency for future exploration of more new mesoscopic phenomena.