A cryogenic amplifier for fast real-time detection of single-electron tunneling

I. T. Vink,T. Nooitgedagt,R. N. Schouten,W. Wegscheider,L. M. K. Vandersypen

DOI: https://doi.org/10.1063/1.2783265

2007-08-06

Abstract:We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of 1 MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. We use this setup to monitor single-electron tunneling to and from an adjacent quantum dot and we measure fluctuations in the dot occupation as short as 400 nanoseconds, 20 times faster than in previous work.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to improve the real - time detection speed and sensitivity of single - electron tunneling events. Specifically, the authors use a low - temperature high - electron - mobility transistor (HEMT) amplifier to increase the measurement bandwidth of the quantum - point - contact (QPC) charge sensor. Due to the limitations of room - temperature current - voltage converters in traditional methods, the measurement bandwidth can only reach several tens of kHz, which restricts the research on fast electron and nuclear spin dynamics and the improvement of single - shot spin - readout fidelity.

### Main Problems and Solutions

1. **Bandwidth Limitation**:
- In traditional methods, due to the low - pass filter formed by the capacitance from the measurement line to the ground and the amplifier input impedance, the measurement bandwidth is limited to several tens of kHz.
- Solution: By using HEMT as a low - temperature pre - amplifier, it can be installed closer to the sample, thereby significantly reducing the capacitance of the measurement line and increasing the bandwidth.

2. **Noise Level**:
- At low temperatures, the noise level of HEMT is very low, especially in the high - frequency band, so better charge sensitivity can be obtained.
- Solution: Utilize the low - noise characteristics of HEMT at low temperatures, enabling the system to work at a 1 MHz bandwidth with a noise contribution only slightly higher than the QPC shot noise.

3. **Real - Time Detection Speed**:
- Increasing the bandwidth can enable real - time detection of single - electron tunneling events on a shorter time scale.
- Solution: Through the improved experimental setup, the authors were able to detect quantum - dot occupancy fluctuations as short as 400 nanoseconds, which is 20 times faster than previous work.

### Experimental Results

- **Bandwidth**: The bandwidth of the experimental device reached 1 MHz.
- **Noise Level**: At frequencies above approximately 200 kHz, the input - reference - voltage noise is 0.4 nV/√Hz, close to the QPC shot - noise limit.
- **Detection Sensitivity**: A charge sensitivity of 4.4×10⁻⁴e/√Hz was achieved, and in the range from 200 kHz to 1 MHz, it is only 3.8 times larger than the shot - noise limit.
- **Shortest Detectable Event**: It is able to detect single - electron tunneling events as short as 400 nanoseconds.

### Formula Presentation

1. **Shot Noise Spectral Density Formula**:
\[
S_I=\frac{2e^2}{h}\sum_i N_i\left[ eV_{qpc}\coth\left(\frac{eV_{qpc}}{2k_BT_e}\right)-2k_BT_e\right]
\]
where:
- \( N_i = T_i(1 - T_i)\), \( T_i\) is the transmission coefficient of QPC mode \(i\)
- \( V_{qpc}\) is the bias voltage on QPC
- \( k_B\) is the Boltzmann constant
- \( T_e\) is the electron temperature

2. **Average Tunneling Rate**:
\[
r_e=\frac{1}{\tau_{on}+\tau_{off}}=\Gamma\times f(\mu)[1 - f(\mu)]
\]
where:
- \( \tau_{on}\) and \( \tau_{off}\) are the average times when the electron is on and off the quantum dot respectively
- \( \Gamma\) is the tunneling rate
- \( f(\mu)\) is the Fermi - Dirac distribution function

Through these improvements, this research shows how to use HEMT as a low - temperature amplifier to significantly improve the bandwidth and sensitivity of the QPC charge sensor, thereby achieving faster and more accurate detection of single - electron tunneling events.