Abstract:We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude better than that of conventional current meters. In addition to measuring the average current, the counting procedure also makes it possible to investigate correlations between charge carriers. In quantum dots, we find that the strong Coulomb interaction makes electrons try to avoid each other. This leads to electron anti-bunching, giving stronger correlations and reduced noise compared to a current carried by statistically independent electrons. The charge detector is implemented by monitoring changes in conductance in a near-by capacitively coupled quantum point contact. We find that the quantum point contact not only serves as a detector but also causes a back-action onto the measured device. Electron scattering in the quantum point contact leads to emission of microwave radiation. The radiation is found to induce an electronic transition between two quantum dots, similar to the absorption of light in real atoms and molecules. Using a charge detector to probe the electron transitions, we can relate a single-electron tunneling event to the absorption of a single photon. Moreover, since the energy levels of the double quantum dot can be tuned by external gate voltages, we use the device as a frequency-selective single-photon detector operating at microwave energies.

A cryogenic amplifier for fast real-time detection of single-electron tunneling

Cryogenic resonant amplifier for electron-on-helium image charge readout

Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier

Ultra-low-noise transimpedance amplifier with a single HEMT in pre-amplifier for measuring shot noise in cryogenic STM

Fast measurement of carbon nanotube resonator amplitude with a heterojunction bipolar transistor

Amplifier for scanning tunneling microscopy at MHz frequencies

Real Time Electron Tunneling and Pulse Spectroscopy in Carbon Nanotube Quantum Dots

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

Two-Stage Cryogenic HEMT Based Amplifier For Low Temperature Detectors

Rapid detection of coherent tunneling in an InAs nanowire quantum dot through dispersive gate sensing

Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

Two-Stage Cryogenic HEMT-Based Amplifier for Low-Temperature Detectors

Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements

Direct detection of quasiparticle tunneling with a charge-sensitive superconducting sensor coupled to a waveguide

Photon-activated electron hopping in a single-electron trap enhanced by Josephson radiation

Single electron tunneling through high-Q single-wall carbon nanotube NEMS resonators

Room-temperature tunnel current amplifier and experimental setup for high resolution electronic spectroscopy in millikelvin STM experiments

Rapid Microwave-Only Characterization and Readout of Quantum Dots Using Multiplexed Gigahertz-Frequency Resonators

Electron counting in quantum dots