Abstract:Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm 2 /Vs and 1.2x10 6 cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10 7 cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.

Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

Cryogenic resonant amplifier for electron-on-helium image charge readout

Ultrasensitive charge detection utilizing coupled nonlinear micromechanical resonators

Signal and Charge Transfer Efficiency of Few Electrons Clocked on Microscopic Superfluid Helium Channels

Sensing and Control of Single Trapped Electrons Above 1 Kelvin

A cryogenic amplifier for fast real-time detection of single-electron tunneling

Measurement of the charge transfer efficiency of electrons clocked on superfluid helium

Self-heating of cryogenic high-electron-mobility transistor amplifiers and the limits of microwave noise performance

High-impedance resonators for strong coupling to an electron on helium

Image-charge detection of the Rydberg transition of electrons on superfluid helium confined in a microchannel structure

Thermionic Emission, Multielectron Bubbles, and A Novel Electron Collector in a Liquid Helium Environment

Two-Stage Cryogenic HEMT Based Amplifier For Low Temperature Detectors

A Micro Resonant Electrometer with Single-Electron Charge Resolution at Room Temperature

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

Two-Stage Cryogenic HEMT-Based Amplifier for Low-Temperature Detectors

Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements

Transport Measurements of Surface Electrons in 200 nm Deep Helium-Filled Microchannels Above Amorphous Metallic Electrodes

Fast measurement of carbon nanotube resonator amplitude with a heterojunction bipolar transistor

Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

Three-Tone Coherent Microwave Electromechanical Measurement of a Superfluid Helmholtz Resonator