Abstract:The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit architectures that enable small scale computation, it becomes important to consider the charge read-out overhead. With this in mind, Reilly et al. demonstrated a gate readout scheme in a GaAs double quantum dot that removed the need for an external charge sensor. This readout, which achieved sensitivities of order me/$\sqrt(Hz)$, was enabled by using a resonant circuit to probe the complex radio-frequency polarisability of the double quantum dot. However, the ultimate performance of this technology and the noise sources that limit it remain to be determined. Here, we investigate a gate-based readout scheme using a radio-frequency resonant circuit strongly coupled to a double quantum at the corner states of a silicon nanowire transistor. We find a significantly improved charge sensitivity of 37 $\mu$e/$\sqrt(Hz)$. By solving the dynamical master equation of the fast-driven electronic transitions we quantify the noise spectral density and determine the ultimate charge and phase sensitivity of gate-based read-out. We find comparable performance to conventional charge sensors and fundamental limits of order ne/$\sqrt(Hz)$ and $\mu$rad/$\sqrt(Hz)$, with the gate-based sensor improving on standard detection for certain device parameters. Our results show that, especially in state-of-the-art silicon qubit architectures, charge detection by probing the complex polarisability has advantages in terms of reducing the readout overhead but also in terms of the absolute charge sensitivity.

Signal and Charge Transfer Efficiency of Few Electrons Clocked on Microscopic Superfluid Helium Channels

Measurement of the charge transfer efficiency of electrons clocked on superfluid helium

Image-charge detection of the Rydberg transition of electrons on superfluid helium confined in a microchannel structure

Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

Blueprint for quantum computing using electrons on helium

Quantum State Transmission in a Superconducting Charge Qubit-Atom Hybrid

Fast Quantum Control of Semiconductor Qubit

Gigahertz quantized charge pumping in graphene quantum dots

Controlled-Not Quantum Logic Gate in Two Strongly Coupled Semiconductor Charge Qubits

Holonomic protected charge qubits coupled via a superconducting resonator

Observation of the Rydberg resonance in surface electrons on superfluid helium confined in a 4-$μ$m deep channel

Quantum computing using floating electrons on cryogenic substrates: Potential and challenges

A proposal for detecting the spin of a single electron in superfluid helium

All-electrical operation of a spin qubit coupled to a high-Q resonator

A high-sensitivity gate-based charge sensor in silicon

Conditional Rotation of Two Strongly Coupled Semiconductor Charge Qubits

A Superfluid Helium Micromechanical Quantum Device as an Artificial Atom

Remote Entangling Gates for Spin Qubits in Quantum Dots using an Offset-Charge-Sensitive Transmon Coupler

Sensing and Control of Single Trapped Electrons Above 1 Kelvin

Simulated coherent electron shuttling in silicon quantum dots