Abstract:Due to the advantages of high power density, high efficiency, and great potential in extreme temperature environments, the GaN high electron mobility transistor (HEMT) device is widely used in circuit systems at high or low temperatures. However, its electrical performance is sensitive to the ambient temperature. Therefore, it is essential to build a model that can accurately characterize the electrical performance of GaN HEMTs at different ambient temperatures, which is also essential for precise circuit design. With the analysis of experiment and theory on the GaN HEMT at different ambient temperatures, an improved model for temperature effect on the DC characteristics of the GaN HEMT is proposed based on EEHEMT model. Considering the influence of the ambient temperature on electrical properties of the GaN HEMT, such as the threshold voltage, the knee voltage, and the saturated current, the model establishes a temperature-dependent function for key parameters in the formula of the drain-source current. Through Verilog-A implementation and simulation on the ICCAP software, the improved model accurately reflects the trend of the electrical performance changes of the GaN HEMT at different ambient temperatures. To further verify the model in this work, the on-wafer measurements at different temperatures including -55, -25, 25 and 75 degrees C are carried out for GaN HEMTs with different sizes, which are developed by Nanjing Electronic Devices Institute. Compared with the measured data, the output characteristics and the transfer characteristics simulated by the proposed model are accurate in an ambient temperature range of -55-75 degrees C, with a relative fitting error less than 5%. The result shows that the improved model is of guiding significance in analyzing the direct current performance and high reliability design of circuits at different temperatures.

Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures

Study on Harmonic Spur Characteristics of AlGaN/GaN HEMT PA at Different Temperatures

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

A Temperature Analysis of High-power AlGaN/GaN HEMTs

Cryogenic Overcurrent Characteristic of GaN HEMT and Converter Evaluation

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Operation of Silicon-Germanium Heterojunction Bipolar Transistors with Different Structures at Deep Cryogenic Temperature.

Modeling of Temperature Effect on DC Characteristics of Micro Wave GaN Devices

Development of a Low-Power Cryogenic MMIC HEMT Amplifier for Heterodyne Array Receiver Application

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation

High Speed Transient Thermal Simulation of GaN HEMT Devices

Cryogenic Investigation of Gate Leakage and RF Performances Down to 50 K of 0.2 Μm AlInAs/GaInAs/InP HEMTs

Steady-State Temperature-Sensitive Electrical Parameters' Characteristics of GaN HEMT Power Devices

Self-heating of cryogenic high-electron-mobility transistor amplifiers and the limits of microwave noise performance