Abstract:Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature. The major drawbacks of conventional pHEMT devices are the very low breakdown voltage (<2 V) and the very high gate leakage current (∼1 mA/mm), which degrade device and performance especially in monolithic microwave integrated circuits low-noise amplifiers (MMIC LNAs). These drawbacks are caused by the impact ionization in the low band gap, i.e., the InxGa(1-x)As (x = 0.53 or 0.7) channel material plus the contribution of other parts of the epitaxial structure. The capability to achieve higher frequency operation is also hindered in conventional InGaAs/InAlAs/InP pHEMTs, due to the standard 1 μm flat gate length technology used. A key challenge in solving these issues is the optimization of the InGaAs/InAlAs epilayer structure through band gap engineering. A related challenge is the fabrication of submicron gate length devices using I-line optical lithography, which is more cost-effective, compared to the use of e-Beam lithography. The main goal for this research involves a radical departure from the conventional InGaAs/InAlAs/InP pHEMT structures by designing new and advanced epilayer structures, which significantly improves the performance of conventional low-noise pHEMT devices and at the same time preserves the radio frequency (RF) characteristics. The optimization of the submicron T-gate length process is performed by introducing a new technique to further scale down the bottom gate opening. The outstanding achievements of the new design approach are 90% less gate current leakage and 70% improvement in breakdown voltage, compared with the conventional design. Furthermore, the submicron T-gate length process also shows an increase of about 58% and 33% in fT and fmax, respectively, compared to the conventional 1 μm gate length process. Consequently, the remarkable performance of this new design structure, together with a submicron gate length facilitatesthe implementation of excellent low-noise applications.

Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation

On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field

Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K

Inas/Ingaas Composite-Channel Hemt On Inp: Tailoring Ingaas Thickness For Performance

Cryogenic Investigation of Gate Leakage and RF Performances Down to 50 K of 0.2 Μm AlInAs/GaInAs/InP HEMTs

DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures

Self-heating of cryogenic high-electron-mobility transistor amplifiers and the limits of microwave noise performance

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Development of a Low-Power Cryogenic MMIC HEMT Amplifier for Heterodyne Array Receiver Application

DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Cryogenic Modeling of GaAs-pHEMT and its Application in Low-power MMIC CLNA Design for Radio Astronomy

Design Optimization of High-Performance Low-Temperature 0.18 /spl Mu/m MOSFETs with Low-Impurity-density Channels at Supply Voltage below 1 V

Characterization of the Noise Performance of a Cryogenically-Cooled HEMT Low-Noise Amplifier

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications

1.9‐Ghz Low Noise Amplifier Using High‐linearity and Low‐noise Composite‐channel HEMTs

RF p -GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity

Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures

Self-assembled monolayer gate doping and their detail deep cryogenic characterization of GaN/Si HEMTs