Abstract:In this work, we demonstrate the on-chip normally-off /on AlGaN/GaN HEMTs with the compatible fabrication processes. The normally-off HEMT utilizes a p-GaN gate to deplete the 2DEG channel, while the normally-on device adopts a MIS gate without the p-GaN layer. Supported by the devices fabrication, the normally-off/on devices are realized on one chip with the same processes. A threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> ) of 2.5V and a drain current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> ) of 324mA/ mm are obtained in the normally-off p-GaN gate HEMT. And the normally-on MIS gate HEMT shows V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> =−3.3V and I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> =408mA/mm. Both of the two devices present the competitive I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> -V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> performances compared with the existing works. This feature suggests that the on-chip normally-off/on AlGaN/GaN HEMTs could be a promising candidate for GaN power integrated technologies.

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High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

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Cryogenic Microwave Performance of Silicon Nitride and Amorphous Silicon Deposited Using Low-Temperature ICPCVD

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

A Temperature Analysis of High-power AlGaN/GaN HEMTs

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Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

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AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications

On-chip AlGaN/GaN HEMTs with the Compatible Normally-off p-GaN Gate and Normally-on MIS Gate Fabrication Processes

Development of a Low-Power Cryogenic MMIC HEMT Amplifier for Heterodyne Array Receiver Application

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate