Abstract:Cryogenic electronics are attracting more and more attentions owing to the rising of space exploration and quantum computing, in which low-temperature stable operation is even more concerned than performance of the integrated circuits (ICs). As a promising semiconducting material, carbon nanotube (CNT) has been extensively explored on its low-temperature transport characteristics, but the cryogenic electronics application of CNT transistors and ICs has seldom been demonstrated. In this work, the low-temperature operation of field-effect transistors (FETs) and ICs built on solution-derived high semiconducting purity randomly oriented CNT film is investigated. The randomly oriented CNT FETs exhibit much higher temperature stability than the individual CNT based FETs and Si transistors from room temperature to liquid nitrogen temperature, and then the ICs constructed by the CNT film FETs present excellent temperature-stability. Specifically, the fabricated five-stage ring oscillators (ROs) exhibit oscillation frequency up to 1.5 GHz with the performance change less than 0.5% at the temperature ranging from 300 to 80 K. The work reveals the great potential of high-performance transistors and ICs built on randomly oriented CNT films in cryogenic electronics applications.

Cryogenic Microwave Performance of Silicon Nitride and Amorphous Silicon Deposited Using Low-Temperature ICPCVD

Cryogenic microwave performance of silicon nitride and amorphous silicon deposited using low-temperature ICPCVD

Material properties of a low contraction and resistivity silicon-aluminum composite for cryogenic detectors

Enhanced Mechanical Properties of SiC/Al Composites at Cryogenic Temperatures

Experimental Research on CTEs of SiO2/PI Nanocomposites at Low Temperature

Annealing reduces Si$_3$N$_4$ microwave-frequency dielectric loss in superconducting resonators

Cryogenic GaN/AlGaN HEMT ICs and Fabrication Probability of Monolithic Sensor of Super- and Semiconductor Devices

Low-loss Si-based Dielectrics for High Frequency Components of Superconducting Detectors

Low-Temperature Materials And Thin Film Transistors For Flexible Electronics

PREPARATION AND MICROWAVE ATTENUATION PERFORMANCE OF AIN - SiC COMPOSITES

A Planar Al-Si Schottky Barrier Metal-Oxide-Semiconductor Field Effect Transistor Operated at Cryogenic Temperatures

Investigation of Electrical Characteristics on SiC MOSFET and JBS-Integrated MOSFET at Cryogenic Temperatures

Wafer-Scale Characterization of a Superconductor Integrated Circuit Fabrication Process, Using a Cryogenic Wafer Prober

Annealing reduces microwave-frequency dielectric loss in superconducting resonators

Low-temperature characteristics and gate leakage mechanisms of LPCVD-SiN<i>x</i>/AlGaN/GaN MIS-HEMTs

A Very Low Temperature Single Crystal Germanium Growth Process on Insulating Substrate Using Ni-Induced Lateral Crystallization for Three-Dimensional Integrated Circuits

Highly Temperature-Stable Carbon Nanotube Transistors and Gigahertz Integrated Circuits for Cryogenic Electronics

Research of Mechanical and Thermal Properties of SiC at Cryogenic Temperatures

Preparation and Dielectric Properties of SiC-AlN Solid Solutions

Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature

Titanium nitride thin film for temperature sensing and its conductive mechanism in the cryogenic region