Annealing reduces microwave-frequency dielectric loss in superconducting resonators

S. Mittal,K. Adachi,N.E. Frattini,M.D. Urmey,S-X. Lin,A.L. Emser,C. Metzger,L.G. Talamo,S. Dickson,D. Carlson,S.B. Papp,C.A. Regal,K.W. Lehnert
DOI: https://doi.org/10.1103/physrevapplied.21.054044
IF: 4.6
2024-05-23
Physical Review Applied
Abstract:The dielectric loss of silicon nitride ( Si3N4 ) limits the performance of microwave-frequency devices that rely on this material for sensing, signal processing, and quantum communication. Using superconducting resonant circuits, we measure the cryogenic loss tangent of either as-deposited or high-temperature annealed stoichiometric Si3N4 as a function of drive strength and temperature. The internal loss behavior of the electrical resonators is largely consistent with the standard tunneling model of two-level systems (TLSs), including damping caused by resonant energy exchange with TLSs and by the relaxation of nonresonant TLSs. We further supplement the TLS model with a self-heating effect to explain an increase in the loss observed in as-deposited films at large drive powers. Critically, we demonstrate that annealing remedies this anomalous power-induced loss, reduces the relaxation-type damping by more than 2 orders of magnitude, and reduces the resonant-type damping by a factor of 3. Employing infrared absorption spectroscopy, we find that annealing reduces the concentration of hydrogen in Si3N4 , suggesting that hydrogen impurities cause substantial dissipation. https://doi.org/10.1103/PhysRevApplied.21.054044 © 2024 American Physical Society
physics, applied
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