Preparation and Dielectric Properties of SiC-AlN Solid Solutions

XY Zhang,SH Tan,WW Xu,SM Dong,ZR Huang,Y Dong,PH Wu,DL Jiang
DOI: https://doi.org/10.4028/www.scientific.net/kem.280-283.127
2007-01-01
Key Engineering Materials
Abstract:The microstructure and microwave dielectric properties of inhomogeneous SiC-AlN solid solutions, hot pressed under a pressure of 40 MPa, have been investigated. Microstructure analysis detected the existence of BN in the resulted samples, which may be a reason that homogeneous solid solution was not formed for the samples with AlN content higher than 20%. The dc resistivity of the solid solutions at room temperature varies from 8 × 103 Ω m to 1 × 109 Ω m. Ion jump and dipole relaxation losses are the main mechanism of dielectric losses.
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