Electrical properties of SiC-AlN ceramics pressureless sintered under N2 atmosphere

Ming Zhu,Jian Chen,Wen-hui Chen,Jia-qi Zheng,Ning-ning Ma,Xue-jian Liu,Zhong-ming Chen,Zheng-ren Huang
DOI: https://doi.org/10.1016/j.ceramint.2020.11.014
IF: 5.532
2021-03-01
Ceramics International
Abstract:<p>SiC-AlN ceramics were pressureless sintered at 2150 °C under N<sub>2</sub> atmosphere, while B<sub>4</sub>C and C were added to promote the sintering process. The microstructure, electrical and mechanical properties of the as-sintered ceramics prepared by different AlN addition are discussed. More AlN addition tends to lead a smaller grain size. As AlN contents go up, the varistor voltage of the samples increases sharply from 17.304v·mm<sup>−1</sup> to more than 100 v·mm<sup>−1</sup> because of the improvement of grain boundary resistance. Correspondingly, the reasons for the increase of grain boundary resistance are: (1) the improvement of carrier compensation increases the Schottky barrier height and width; (2) more grain boundaries increase the number of Schottky barriers. In addition, the electrical properties of the same components sintered under N<sub>2</sub> and Ar have been compared, that the varistor voltage of the same component SiC-AlN ceramics sintered under N<sub>2</sub> are much higher than those under Ar (about 2 orders of magnitude). With the increase of AlN contents, the mechanical properties remain unchanged except the little reduction of Vickers hardness.</p>
materials science, ceramics
What problem does this paper attempt to address?