High infrared emissivity of SiC-AlN ceramics at room temperature

Ming Zhu,Jian Chen,Nian Ran,Jia-qi Zheng,Zheng-ren Huang,Xue-jian Liu,Zhong-ming Chen
DOI: https://doi.org/10.1016/j.jeurceramsoc.2020.04.012
IF: 5.7
2020-08-01
Journal of the European Ceramic Society
Abstract:<p>SiC-AlN ceramics were fabricated by pressureless sintering with B<sub>4</sub>C-C as sintering additives. The effects of AlN contents on infrared emissivity, thermal conductivity and electrical properties of SiC ceramics were investigated. The improvement of total emissivity is slight before 3 wt%AlN, but impressive after 3 wt%AlN. The significant increase of the emissivity for AlN content higher than 3 wt% could be explained via DFT calculation, that the impurity energy level formed by N atom doping into 4H-SiC and the lattice distortion are mainly responsible for it. Besides, the highest total emissivity is 0.775 when the content of AlN is 5 wt%. Additionally, more AlN solid solution results in a decrease in thermal conductivity and an enhancement in electrical resistivity. There is always a compromise among the three properties of SiC-AlN ceramics.</p>
materials science, ceramics
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