Fabrication and characterization of SiC–TiB 2 composite ceramics used as infrared source material

Ming Zhu,Jian Chen,Fan-fan Li,Chang-cong Huang,Huan Liu,Xue-jian Liu,Zheng-ren Huang
DOI: https://doi.org/10.1016/j.ceramint.2022.11.351
IF: 5.532
2023-02-23
Ceramics International
Abstract:SiC–TiB 2 composite ceramics were fabricated by pressureless sintering at 2200 °C using B 4 C and C as sintering additives. The effects of TiB 2 content on the microstructure, electrical properties, infrared radiation properties and mechanical properties of the composites have been systematically studied. The prepared composites have high relative density (>98%) and good mechanical properties. The existence of Schottky barrier at the SiC–SiC grain boundary makes SiC-based ceramics showing high resistivity and nonlinear electrical feature. The introduction of TiB 2 forms the SiC–TiB 2 grain boundary with lower barrier height, which allows electrons to pass through more easily. Therefore, the nonlinear coefficient and the resistivity of SiC–TiB 2 composite ceramics both gradually decrease with the increase of TiB 2 content. When the TiB 2 content reaches 15 vol%, the electrical percolation property is obtained, and the bulk resistivity drops to 0.87 Ω cm. The infrared emissivity of the composites shows a decreasing tendency, which is not conducive to practical application. According to the results of electrical and infrared radiation properties, the addition amount of 15 vol%TiB 2 is a better formula.
materials science, ceramics
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