Effects of Sintering Additives on the Thermoelectric Properties of SiC Ceramics

Chul-Hoon PAI,Kunihito KOUMOTO,Hiroaki YANAGIDA
DOI: https://doi.org/10.2109/jcersj.97.1170
1989-01-01
Journal of the Ceramic Society of Japan
Abstract:The effects of sintering additives on the thermoelectric properties of SiC ceramics were studied. Porous SiC ceramics with -60% relative density were fabricated by sintering the pressed β-SiC powder compacts with additives (B, AlN) at 1900°-2100°C for 0.5-5h in nitrogen atmosphere. The sintered bodies were analyzed by means of XRD and SEM. In the case of B addition, XRD analysis showed that little phase transformation occurred during sintering and that BN was formed by the reaction with N2. Lattice parameter measurements revealed incorporation of a certain amount of added B into the β-SiC lattice. On the other hand, in the case of 10wt% AlN addition, XRD and SEM analyses showed a phase transformation of β-SiC to mainly 4 H-SiC during sintering. The electrical conductivity and the Seebeck coefficient were measured at 350°-1050°C in argon atmosphere. The average grain size and the quantity of additives had significant effects on the thermoelectric properties of SiC.
materials science, ceramics
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