Low-loss Si-based Dielectrics for High Frequency Components of Superconducting Detectors

M. Lisovenko,Z. Pan,P. S. Barry,T. Cecil,C. L. Chang,R. Gualtieri,J. Li,V. Novosad,G. Wang,V. Yefremenko
DOI: https://doi.org/10.1109/TASC.2023.3264174
2023-04-04
Abstract:Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric and metal layers can cause microwave losses and degrade device performance. Optimization of the dielectric fabrication, device structure, and surface morphology can help mitigate this problem. We present the fabrication of silicon oxide and nitride thin film dielectrics. We then characterized them using Scanning Electron Microscopy, Atomic Force Microscopy, and spectrophotometry techniques. The samples were synthesized using various deposition methods, including Plasma-Enhanced Chemical Vapor Deposition and magnetron sputtering. The films morphology and structure were modified by adjusting the deposition pressure and gas flow. The resulting films were used in superconducting resonant systems consisting of planar inductors and capacitors. Measurements of the resonator properties, including their quality factor, were performed.
Instrumentation and Methods for Astrophysics,Instrumentation and Detectors
What problem does this paper attempt to address?
This paper aims to solve the low - loss problem of silicon - based dielectric materials in high - frequency components of superconducting detectors. Specifically, the paper focuses on reducing defects and contaminants in dielectric materials, which can cause microwave losses and thus affect device performance. By optimizing the preparation process, device structure and surface morphology of dielectric materials, this problem can be effectively alleviated. The paper discusses in detail the influence of different deposition methods (such as ion - beam - assisted sputtering deposition (IBAS) and plasma - enhanced chemical vapor deposition (PECVD)) on the quality of dielectric films, and characterizes the prepared dielectric films by scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometer techniques. In addition, the characteristics such as the quality factor of the films are measured using a superconducting resonance system to evaluate their performance in practical applications. In summary, the paper attempts to reduce the loss of dielectric materials under high - frequency conditions by improving their preparation process, thereby enhancing the performance of superconducting detectors.