Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators

Bruno T. Buijtendorp,Juan Bueno,David J. Thoen,Vignesh Murugesan,Paolo M. Sberna,Jochem J.A. Baselmans,Sten Vollebregt,Akira Endo
DOI: https://doi.org/10.1117/1.JATIS.8.2.028006
2020-12-15
Abstract:Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below $10^{-5}$ for a resonator energy of $10^5$ photons, at 120 mK and 4-7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters.
Instrumentation and Methods for Astrophysics,Materials Science,Superconductivity
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