Low-T Sintering, Low-Dielectric Materials for High Frequency Multilayer Chip Inductors

LH Luo,HP Zhou,KX Chen
DOI: https://doi.org/10.1002/9781118380802.ch27
2006-01-01
Abstract:The low temperature sintering of low dielectric- properties ceramic material with the composition system of "borosilicate glass + alpha-quartz + zinc silicate was investigated in present paper. This system material possess some special properties of low dielectric constant( K = 4-5, 1MHz), low dissipation factor( tandelta less than or equal to 10(-3), 1MHz) in high frequency and low sintering temperature (below 900degreesC) at which it can be co-fired with high conductivity metal Ag paste, suggesting that it would be a promising dielectric material for high frequency ceramic, multilayer parts. The crystalline phases, the dielectric properties, the mechanism for densification in the sintering process and the microstructure of the sintered samples were analyzed by X-ray diffraction (XRD) HP4194ALCR analyzer, Transmission Electron Microscopy (TEM) and Scanning Electron Microscopy (SEW, respectively. It was found that new crystalline phase of cristobalite could be developed during re-sintering the borosilicate glass; in the mean while, sub-zinc silicate (ZnSiO3) phase was formed from zinc silicate with zinc ions melting into the boro-silicate glass network. Moreover,zinc silicate acted as not, only a suitable fill but also a good sintering assistant regent in the experiment. The experimental results also showed the dependence of dielectric properties of the sintered samples on frequency conform to Debye formulas.
What problem does this paper attempt to address?