A New System of Low Temperature Sintering ZnO–SiO2 Dielectric Ceramics

Jia-Li Zou,Qi-Long Zhang,Hui Yang,Hui-Ping Sun
DOI: https://doi.org/10.1143/jjap.45.4143
IF: 1.5
2006-01-01
Japanese Journal of Applied Physics
Abstract:A new ZnO-SiO2 microwave dielectric ceramic system with Li2CO3 and Bi-103 composite additives was studied. It was difficult to acquire dense ceramics at 1380 degrees C without sintering aids using the ZnO-SiO2 system. With 5 wt % Li2CO3 and 4 wt % Bi2O3 composite addition, the ZnO-SiO2 System can be sintered well at approximately 900 degrees C. The dielectric constant of ZnO-SiO2 system decreased with increasing SiO2 content and Q x f value acquired a maximum at a certain SiO2 content. The samples of ZnO-0.6SiO(2) with Li2CO3 and Bi2O3 addition sintered at 910 degrees C for 2h showed excellent properties such as epsilon(r) = 6.65, Q x f = 33,000 GHz (at 11 GHz), and tau(f) = -70 ppm/degrees C.
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