Low-fired microwave dielectrics in ZnO-TiO 2 ceramics doped with CuO and B 2 O 3

Bo Li,Zhenxing Yue,Longtu Li,Ji Zhou,Zhilun Gui
DOI: https://doi.org/10.1023/A:1016044627750
2002-01-01
Abstract:The microwave dielectric properties and the microstructure of low-firing zinc titanate ceramics have been investigated. The microstructure of these ceramics have been studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), and it was found that CuO addition has the important effect of stabilizing the Zn 2 TiO 4 phase. When the sintering temperatures are in the range of 870–950 °C, dielectric constant values (ε r ) saturate at 21–25, the Q×f value is 20 000 GHz (at 10 GHz). The temperature coefficient of resonant frequency (τ f ) was 10 ppm °C −1 . Therefore, the 0.5 wt %-CuO and 1.0 wt %-B 2 O 3 doped ZnO-TiO 2 ceramics can be used in multi-layer microwave devices requiring low sintering temperature.
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