Microwave dielectric properties and sintering behaviors of Zn1.8SiO3.8 ceramics

Zheng Liang,Xuening Han,Gang Wang,Yan Yang,Liang Shi,Wenxin Li,Jie Li,Huaiwu Zhang
DOI: https://doi.org/10.1007/s10854-020-04835-0
2020-11-12
Abstract:Zn<sub>2</sub>SiO<sub>4</sub> ceramics are important candidates for microwave dielectric materials applied in wireless communication. However, the appearance of the second phase and stomatal impurity affect the microwave dielectric properties. In this work, Zn<sub>2</sub>SiO<sub>4</sub> ceramics were prepared by the conventional solid-state process under different temperatures according to Zn-deficient formula to suppress the formation of secondary phase. X-ray diffraction showed peaks that coincide with those of Zn<sub>2</sub>SiO<sub>4</sub> PDF card standard without secondary phase. Scanning electron microscopy revealed that there were uniform crystal grains at 1300 °C, and larger grains sizes yielded smaller pore gaps. The dielectric properties of Zn<sub>1.8</sub>SiO<sub>3.8</sub> ceramics sintered at 1300 °C were estimated to <i>ε</i><sub><i>r</i></sub> = 6.451, Q*<i>f</i> = 102,807 GHz, and τ<sub><i>f</i></sub> = -32 ppm/°C. In summary, Zn<sub>1.8</sub>SiO<sub>3.8</sub> ceramics had potential applications in wireless communication technology due to their excellent dielectric property.
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