Effect of A-site Substitution on Sintering and Dielectric Properties of ZnO-0.5SiO2 Ceramics

徐进,李福龙,张启龙

DOI: https://doi.org/10.3321/j.issn:0438-0479.2009.01.001

2009-01-01

Abstract:The ZnO-0.5SiO2 ceramics were prepared by conventional solid oxide process method.For the ZnO-0.5SiO2 system,the effect of A-site substitution on sintering and dielectric properties was systematically investigated.According to the XRD analysis,it was found that the maximum solubility of Mg2+ is 0.5:when the solubility,x(Mg),is lower than 0.5,the(Zn1-x,Mgx)2SiO4 phase formed in the ceramics;but if the solubility is higher than 0.50,the second phases of Mg2SiO4 and Mg2SiO3 formed in the system.Thus,it is reasonable to deduce that the solubility limitation has a significant influence on the formation of the phases in the ceramics.The influence of the x(Mg) value on the microstructure property of the ceramics was revealed by the SEM observation.The decrease of the sintering temperature was explained by considering the introduction of the Mg2+,which led to the distortion of the crystal lattice or the formation of defects in the ceramics.For x(Mg)≤0.5,the dielectric constant varied a little and the quality factor shown higher values.For x(Mg)0.5,the dielectric constant increased but the quality factor decreased sharply.It was verified that the(Zn1-x,Mgx)2SiO4(x=0.1～0.3) ceramics sintered at 1 275℃ exhibited good microwave dielectric properties;the dielectric constant,the quality factor and the temperature coefficient of resonant frequency are 6.19～6.23,48 000～53 000 GHz and-50×10-6～-60×10-6/℃,respectively.