Microwave Dielectric Properties of CuO-V 2 O 5 -Bi 2 O 3 -Doped ZnNb 2 O 6 Ceramics with Low Sintering Temperature

Ying Chun Zhang,Zhen Xing Yue,Zhi Lun Gui,Long Tu Li

DOI: https://doi.org/10.1007/s10832-005-6586-0

2005-01-01

Journal of Electroceramics

Abstract:Microwave dielectric properties of low temperature sintering ZnNb 2 O 6 ceramics doped with CuO-V 2 O 5 -Bi 2 O 3 additions were investigated systematically. The co-doping of CuO, V 2 O 5 and Bi 2 O 3 can significantly lower the sintering temperature of ZnNb 2 O 6 ceramics from 1150 to 870 ∘ C. The secondary phase containing Cu, V, Bi and Zn was observed at grain boundary junctions, and the amount of secondary phase increased with increasing CuO-V 2 O 5 -Bi 2 O 3 content. The dielectric properties at microwave frequencies (7–9 GHz) in this system exhibited a significant dependence on the relative density, content of additives and microstructure of the ceramics. The dielectric constant (ε r ) of ZnNb 2 O 6 ceramics increased from 21.95 to 24.18 with increasing CuO-V 2 O 5 -Bi 2 O 3 additions from 1.5 to 4.0 wt%. The quality factors ( Q × f ) of this system decreased with increasing CuO-V 2 O 5 -Bi 2 O 3 content and ranged from 36118 to 67100 GHz for sintered ceramics, furthermore, all Q × f values of samples with CuO-V 2 O 5 -Bi 2 O 3 additions are lower than that of un-doped ZnNb 2 O 6 ceramics sintered at 1150 ∘ C for 2 h. The temperature coefficient of resonant frequency (τ f ) changed from −33.16 to −25.96 ppm/ ∘ C with increasing CuO-V 2 O 5 -Bi 2 O 3 from 1.5 to 4.0 wt%