Microwave Dielectric Properties of CaF<sub>2</sub>-Doped ZnNb<sub>2</sub>O<sub>6</sub> Ceramics

Ying Chun Zhang,Long Tu Li,Zhen Xing Yue,Zhi Lun Gui
DOI: https://doi.org/10.4028/www.scientific.net/KEM.224-226.5
2002-01-01
Key Engineering Materials
Abstract:The effects of CaF2 on the sintering behavior and microwave dielectric properties of ZnNb2O6 ceramics were investigated by X-ray diffraction and scanning electron microscopy techniques. It was found that a 0.5wt% CaF2 addition to ZnNb2O6 ceramics significantly lowered the firing temperature from 1150degreesC to 1080degreesC. ZnNb2O6 ceramics doped with CaF2 has relatively high quality factors and dielectric constants. As the amount of CaF2 addition increased from 0.1 to 5wt%, both quality factors and dielectric constants firstly increased, reached a maximum at 0.5wt% CaF2, then decreased with further increase amount of CaF2 addition. The ZnNb2O6 doped with 0.5wt% CaF2 ceramics sintered at 1100degreesC has the optimum microwave dielectric properties.
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