Abstract:Low sintering temperature ZnNb2O6 microwave ceramics were prepared by doping with mixed oxides of V2O5–Bi2O3 and V2O5–Bi2O3–CuO. The effects of additives on the microstructure and dielectric properties of the ceramics were investigated. The results show that doping with V2O5–Bi2O3 can reduce the sintering temperature of ZnNb2O6 from 1150°C to 1000°C due to the formation of V2O5 and Bi2O3 based eutectic phases. The combined influence of V2O5 and Bi2O3 resulted in rod-like grains. Co-doping CuO with 1wt.% V2O5–1wt.% Bi2O3 further lowered the sintering temperature to 880°C, because eutectic phases could be formed between the CuO, V2O5 and Bi2O3. A second phase of (Cu2Zn)Nb2O8 also forms when the content of CuO is greater than 2.5wt.%. A pure ZnNb2O6 phase can be obtained when the amount of CuO was 1.0–2.5wt.%. The Q×f values of ZnNb2O6 ceramics doped with V2O5–Bi2O3–CuO were all higher than 25,000GHz. The dielectric constants were 22.8–23.8 at microwave frequencies. In addition, theτf values decreased towards negative as the content of CuO increased. The ceramic with composition of ZnNb2O6+1wt.%V2O5+1wt.% Bi2O3+2.5wt.% CuO sintered at 880°C exhibited the optimum microwave dielectric properties, ɛ is 23.4, Q×f is 46,975GHz, and τf is −44.89ppm/°C, which makes it a promising material for low-temperature co-fired ceramics (LTCCs).

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Effects of CuO-V2O5-Bi2O3 Additions on the Microstructure and Microwave Dielectric Properties of 0.42Znnb2o6-0.58Tio2 Ceramics

Effects of additives on microstructures and microwave dielectric properties of ZnNb2O6 ceramics

Microwave Dielectric Properties of Cuo-V2o5-Bi2o3-Doped Znnb2o6 Ceramics with Low Sintering Temperature

Microwave Dielectric Properties of CuO-V 2 O 5 -Bi 2 O 3 -Doped ZnNb 2 O 6 Ceramics with Low Sintering Temperature

Low-Temperature Firing and Microwave Dielectric Properties of Zn3nb2o8 Ceramics with Cuo-V2o5-Bi2o3

Effects Of Catio(3)On Microstructures And Properties Of (1-X) Znal2o4-Xmg(2) Tio4 (X=0.1) Microwave Dielectric Ceramics

Microstructure and Dielectric Properties of Low Temperature Sintered ZnNb2O6 Microwave Ceramics

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Effects of Ti<sup>4+</sup> Substitution on Microstructure and Microwave Dielectric Properties of ZnNb<sub>2(1-x)</sub>TixO<sub>(6-3x)</sub> Ceramics

Study on Dielectric Properties of (1–x) BiNbO_(4-x)ZnTaO_6 Ceramics with CuO-V_2O_5 Additive

Microwave Properties of Low-Fired Li2ZnTi3O8 Ceramics Doped with CuO–Bi2O3–V2O5

Effect of CuO-MoO3 Additions on Structure and Microwave Dielectric Properties of BZT Ceramics

Effect of CuO or/and V2O5 oxide additives on Bi2O3–ZnO–Ta2O5 based ceramics

Effect of ZnO-V2O5Co-doping on phase stability and microwave dielectric properties of ZnTiO3 ceramics

Microstructure and microwave dielectric properties of ZnO-B2O3 doped ceramics

Low temperature sintering and microwave dielectric properties of BaO–0.6ZnO–2.9TiO 2 ceramics using BaCu(B 2 O 5 ) addition

Effects of ZnO–xV2O5 Substitution on the Microstructure and Microwave Dielectric Properties of ZnNb2O6 Ceramics

Structure characteristics of low-temperature-sintered ZnNb 2O6 microwave dielectric ceramics

Dielectric Properties of Zirconium Tin Titanate with Additives of ZnO, CuO, MnCO<sub>3</sub> and Bi<sub>2</sub>O<sub>3</sub>