High thermal stability Ohmic contact for GaN-based devices

Chia-Yi Wu,Tien-Sheng Chao,Yi-Chia Chou

DOI: https://doi.org/10.1039/d3na00491k

IF: 5.598

2023-08-24

Nanoscale Advances

Abstract:Co-integration of gallium nitride (GaN) power devices with Si logic ICs makes a way of applying high power and high efficiency circuits on a single chip. In order to co-integrate GaN devices with Si ICs, an Ohmic contact for GaN devices has to be Si compatible and durable under the same or higher temperature of the back-end process in the conventional complementary metal oxide semiconductor (CMOS) industry. In this work, an Au-free Ohmic junction with high thermal stability for AlGaN/GaN high electron mobility transistors (HEMTs) was presented. The proposed titanium nitride (TiN) contacts on AlGaN/GaN HEMTs remained its Ohmic characteristic and stayed stable at temperatures even higher than 1000 ̊C. The interface chemistry analyzing using STEM EELS revealed the enhancement of the binding energy of Ga-N and Al-N and invisible diffusion of Ti at the treatment under 1000 ̊C. This clarifies the origin of the highly stable Ohmic contact. Thus, our work provides a new pathway and thought for forming reliable contacts for HEMTs or another GaN-base device.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the thermal stability issue of ohmic contact materials for gallium nitride (GaN) - based devices at high operating temperatures. Specifically, the paper explores how to develop an ohmic contact material that is compatible with the silicon (Si) process and remains stable at high temperatures without using gold (Au). Although traditional gold - containing ohmic contacts perform well at low temperatures, they are prone to diffusion and oxidation during high - temperature processing, leading to performance degradation. Therefore, the paper proposes a gold - free ohmic contact based on titanium nitride (TiN), aiming to improve the reliability and stability of GaN - based devices under high - temperature conditions. ### Main Research Contents 1. **Material Selection**: Titanium nitride (TiN) was selected as the ohmic contact material because it has high thermal stability and a low work function, making it suitable for integration with GaN - based devices. 2. **Experimental Methods**: - The transfer length method (TLM) was used to determine the contact resistance. - The interface chemistry was analyzed by scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). - Annealing treatments were carried out at different temperatures, with the highest temperature reaching 1050 °C. 3. **Result Analysis**: - The TiN contact could still maintain ohmic characteristics after high - temperature treatment up to 1050 °C, showing good thermal stability. - Compared with the traditional Ti/Au contact, the TiN contact exhibited better stability and lower contact resistance at high temperatures. - STEM - EELS analysis showed that there was no obvious diffusion phenomenon in the TiN contact during high - temperature treatment, and the binding energy of Ga - N and Al - N bonds was enhanced, further explaining its high stability. ### Conclusion The paper successfully demonstrated the application potential of TiN as an ohmic contact material with high thermal stability in GaN - based devices. The TiN contact not only exhibits excellent stability and low contact resistance at high temperatures but is also compatible with the existing silicon process, providing new ideas and technical paths for future GaN - based device integration.

High thermal stability Ohmic contact for GaN-based devices

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