Abstract:Transparent junctionless organic-inorganic hybrid electric-double-layer thin-film transistors are demonstrated using a reinforced solution-processed chitosan-based biopolymer electrolyte as a dielectric layer. The specific feature of such device is that the channel and source/drain electrodes are realized using a thin indium tin oxide (ITO) film without any source/drain junction. A SiO2 film (similar to 5 nm)/chitosan organic-inorganic hybrid bilayer dielectric is found to be an efficient way to improve the stability and performance of the devices. Our results indicate that the transistor gated by organic-inorganic hybrid bilayer dielectric with a thin ITO channel (similar to 10 nm) exhibited a better performance with a lower subthreshold swing (84 mV/dec), a larger ON/OFF ratio (5.5 x 10(7)), and a smaller bias-stressing threshold voltage shift (Delta V-th = 0.13 V). A physical model based on energy diagram with 1-D Poisson equation is proposed to interpret the operating mechanism. These results clearly show that the proposed architecture can provide a new opportunity for the next-generation low-voltage low-cost device design.

Junctionless In-Plane-gate Transparent Thin-Film Transistors

Transparent Junctionless Thin-Film Transistors with Tunable Operation Mode

Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing

Laser Patterned Junctionless In-Plane-Gate Oxide Thin-Film Transistors Arrays

Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Laser Written Junctionless Dual In-Plane-gate Thin-Film Transistors with AND Logic Function

Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by A Gradient Shadow Mask

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Fabrication and performance of indium oxide based transparent thin film transistors

Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Ultralow-Voltage Transparent $\hbox{in}_{2} \hbox{o}_{3}$ Nanowire Electric-Double-Layer Transistors

In-Plane-Gate Transparent $\hbox{sno}_{2}$ Nanowire Transistors

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Ultralow-Voltage Transparent Electric-Double-Layer Thin-Film Transistors Processed at Room-Temperature

High Performance Tri-gate Germanium-on-insulator Based Junctionless Nanowire Transistors

In-Plane-Gate Indium-Tin-Oxide Thin-Film Transistors Self-Assembled on Paper Substrates

High-Mobility Transparent Thin-Film Transistors with an Sb-Doped Sno2 Nanocrystal Channel Fabricated at Room Temperature