Abstract:Active electronics implemented on cheap flexible polymer substrates offer the promise of novel display technologies, wearable electronics, large area memory, and a multitude of other, as-yet-unthought-of applications that require low cost and high volume manufacturing. Thin film transistors (TFT's) fabricated on temperature-sensitive plastic substrates at low temperatures are the key to this technology. TFT's that use metal (In, Zn, Sn, Ga) oxide channels offer both high mobility (relative to amorphous Si) and the advantage of optical transparency in the visible regime. We report on the fabrication and performance of amorphous oxide transparent thin film transistors that use dc-magnetron sputter techniques to deposit IZO (In2O3 — 10 wt.% ZnO) at low oxygen potential (0 vol.% O2) for the source, drain, and gate-contact metallization and, at higher oxygen partial pressures (10 vol.% O2), for the semi-conducting channel. The devices in this study were processed at room temperature except for a single 280 °C PECVD deposition step to deposit a 230 nm-thick SiOx gate dielectric. The devices are optically transparent and operate in depletion mode with a threshold voltage of −5 V, mobility of 15 cm2/V s, an on-off ratio of >106 and, a sub-threshold slope of 1.2 V/decade. In addition, we report persistent photo-conductivity in the channel region of these devices when exposed to UV illumination.

Transparent Junctionless Thin-Film Transistors with Tunable Operation Mode

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Junctionless In-Plane-gate Transparent Thin-Film Transistors

Amorphous IZO-based transparent thin film transistors

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by A Gradient Shadow Mask

Fabrication and performance of indium oxide based transparent thin film transistors

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Ultralow-Voltage Transparent Electric-Double-Layer Thin-Film Transistors Processed at Room-Temperature

Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

Self-Assembled Transparent A-Igzo Based Tfts for Flexible Sensing Applications

Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Low-voltage Transparent Electric-Double-layer ZnO-based Thin-Film Transistors for Portable Transparent Electronics

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte