Abstract:Ultrathin catalytical silicon nanowires (SiNWs), grown as orderly arrays upon glass substrates, are ideal 1D channels for the construction of high-performance field effect transistors for low-power and high aperture/transparency electronics. In this work, a rather uniform growth integration of high-density ultrathin SiNWs has been accomplished directly on glass substrate at 290 degrees C, via an in-plane solid-liquid-solid mechanism. The indium (In) catalyst thickness deposited on the dense guiding terrace steps was identified as a key parameter to suppress the size dispersion of the In droplets, and thus enable a uniform growth of ultrathin SiNWs with diameters down to D-NW=21.8 +/- 1.8 nm, a close-to-unity guided growth rate and an excellent transparency > 90 % in spectrum ranging from 350 nm to 950 nm. Based on a convenient dry plasma etching and low-temperature passivation procedure, high-performance SiNW transistors have been successfully fabricated upon a dense array of parallel SiNWs as channels with a narrow NW-to-NW spacing of 100 nm. A high current ratio I-on/I-off > 10(7), a low off-state current down to 0.1 pA, a steep subthreshold swing of SS similar to 120 mV dec(-1) and excellent positive and negative bias stabilities have been demonstrated, as well as SiNW-based inverter logics that achieve a gain of 14.6 V/V under a drive voltage of 2.25 V. These results highlight the potential of catalytic SiNWs to serve as advantageous 1D channels for large-area display or transparent electronics.

Ultralow-Voltage Transparent $\hbox{in}_{2} \hbox{o}_{3}$ Nanowire Electric-Double-Layer Transistors

In-Plane-Gate Transparent $\hbox{sno}_{2}$ Nanowire Transistors

Transparent $\hbox{sno}_{2}$ Nanowire Electric-Double-Layer Transistors with Different Antimony Doping Levels

Low-voltage Transparent Electric-Double-layer ZnO-based Thin-Film Transistors for Portable Transparent Electronics

Low-Voltage Transparent Sno2 Nanowire Transistors Gated by Microporous Sio2 Solid-Electrolyte with Improved Polarization Response

Ultralow-Voltage Transparent Electric-Double-Layer Thin-Film Transistors Processed at Room-Temperature

Ultra Low-Voltage Electric Double-Layer Sno2 Nanowire Transistors Gated by Microporous Sio2-Based Solid Electrolyte

High-Mobility Transparent Thin-Film Transistors with an Sb-Doped Sno2 Nanocrystal Channel Fabricated at Room Temperature

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

High-performance, Fully Transparent, and Flexible Zinc-Doped Indium Oxide Nanowire Transistors

Junctionless In-Plane-gate Transparent Thin-Film Transistors

Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer.

Low-Voltage Oxide Homojunction Electric-Double-Layer Transistors Gated by Ion-Incorporated Inorganic Solid Electrolytes

Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte

High-density Integration of Uniform Sub-22 Nm Silicon Nanowires for Transparent Thin Film Transistors on Glass

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

Microporous SiO2 with Huge Electric-Double-layer Capacitance for Low-Voltage Indium Tin Oxide Thin-Film Transistors

Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte

Transparent Junctionless Thin-Film Transistors with Tunable Operation Mode

Fabrication and performance of indium oxide based transparent thin film transistors