Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Ultra Low-Voltage Electric Double-Layer Sno2 Nanowire Transistors Gated by Microporous Sio2-Based Solid Electrolyte

Low-Voltage Transparent Sno2 Nanowire Transistors Gated by Microporous Sio2 Solid-Electrolyte with Improved Polarization Response

In-Plane-Gate Transparent $\hbox{sno}_{2}$ Nanowire Transistors

Low-voltage Electric-Double-layer Paper Transistors Gated by Microporous SiO2 Processed at Room Temperature

Low-Voltage Sno2 Nanowire Transistors Gated by Solution-Processed Chitosan-Based Proton Conductors

Ultralow-Voltage Transparent $\hbox{in}_{2} \hbox{o}_{3}$ Nanowire Electric-Double-Layer Transistors

Individual Sno2 Nanowire Transistors Fabricated by the Gold Microwire Mask Method

High-Mobility Transparent Thin-Film Transistors with an Sb-Doped Sno2 Nanocrystal Channel Fabricated at Room Temperature

Low-voltage ZnO thin-film transistors operating at 2.0 V gated with mesoporous SiO2 dielectric processed at room-temperature

Si/SnS2 Vertical Heterojunction Tunneling Transistor with Ionic-Liquid Gate for Ultra-Low Power Application

Vertical Low-Voltage Oxide Transistors Gated by Microporous SiO2/LiCl Composite Solid Electrolyte with Enhanced Electric-Double-layer Capacitance

Microporous SiO2 with Huge Electric-Double-layer Capacitance for Low-Voltage Indium Tin Oxide Thin-Film Transistors

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate

Nanowire Field-Effect Transistor with Bi1.5Zn1.0Nb1.5O7 Dielectric

Electrical properties of a single Ni-contact SnO2 nanowire field-effect transistors

Low-Noise Schottky Junction Trigate Silicon Nanowire Field-Effect Transistor for Charge Sensing

Si Nanowire - Array Source Gated Transistors

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte

Low-voltage Transparent Electric-Double-layer ZnO-based Thin-Film Transistors for Portable Transparent Electronics

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact