Abstract:In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode, which induces relatively higher power consumption and fancier circuit integration design. Here, n-type enhancement-mode In(2)O(3) NW FETs are successfully fabricated by doping different metal elements (Mg, Al, and Ga) in the NW channels. Importantly, the resulting threshold voltage can be effectively modulated through varying the metal (Mg, Ga, and Al) content in the NWs. A series of scaling effects in the mobility, transconductance, threshold voltage, and source-drain current with respect to the device channel length are also observed. Specifically, a small gate delay time (0.01 ns) and high on-current density (0.9 mA/μm) are obtained at 300 nm channel length. Furthermore, Mg-doped In(2)O(3) NWs are then employed to fabricate NW parallel array FETs with a high saturation current (0.5 mA), on/off ratio (>10(9)), and field-effect mobility (110 cm(2)/V·s), while the subthreshold slope and threshold voltage do not show any significant changes. All of these results indicate the great potency for metal-doped In(2)O(3) NWs used in the low-power, high-performance thin-film transistors.

Nanowire Field-Effect Transistor with Bi1.5Zn1.0Nb1.5O7 Dielectric

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Zinc Oxide Nanowire Networks for Macroelectronic Devices

Ultra Low-Voltage Electric Double-Layer Sno2 Nanowire Transistors Gated by Microporous Sio2-Based Solid Electrolyte

High-Performance Zno Nanowire Field-Effect Transistor With Forming Gas Treated Sio2 Gate Dielectrics

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High-k Nb2O5-Bi2O3-MgO Ceramics As Gate Dielectric on a Plastic Substrate

Topological Insulator Bi2se3 Nanowire High Performance Field-Effect Transistors

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Nanotube and Nanowire Transistors

In-Plane-Gate Transparent $\hbox{sno}_{2}$ Nanowire Transistors

Low-Voltage Sno2 Nanowire Transistors Gated by Solution-Processed Chitosan-Based Proton Conductors

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Electrical and Optical Properties of Single As-Doped Zno Nanowire Field Effect Transistors

The Research on Suspended Zno Nanowire Field-Effect Transistor

Low-Voltage Transparent Sno2 Nanowire Transistors Gated by Microporous Sio2 Solid-Electrolyte with Improved Polarization Response

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

High-Mobility Transparent Thin-Film Transistors with an Sb-Doped Sno2 Nanocrystal Channel Fabricated at Room Temperature

High performance Bi2Se3 nanowire field-effect transistors

High Performance Top-Gated Ferroelectric Field Effect Transistors Based on Two-Dimensional ZnO Nanosheets

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.