Abstract:Electrical characterization of semiconducting oxide nanowires (NWs) is mostly performed using complex techniques, which necessitates a series of costly nanofabrication procedures. In this work, with the aim to provide a low-cost, feasible, facile, and reproducible approach for enabling the study of NW electrical properties, we report direct electrical measurements on individual and overlapped suspended zinc oxide NWs (ZnO NWs). We have succeeded in constructing both two- and three-terminal devices simply by employing tungsten (W) nanoprobes with the aid of a nanomanipulation system embedded inside a scanning electron microscope’s vacuum chamber. Stable contacts were established using the Joule heating effect and e-beam exposure at the junctions between the NW and the pre-cleaned W tips. P-channel field-effect transistor devices were achieved with an on–off current ratio of ∼101, a threshold voltage (>1.5 V), a transconductance of ∼16 μS, a sub-threshold swing of ∼220 mV/decade, and field-effect carrier mobility roughly estimated to be around 926.4 cm2/(V·s) after correction for contact resistances/optimization. The average resistivity of ZnO NWs was calculated to be ∼2.23 × 10–2 Ω·cm for NWs with diameters between 70 and 500 nm. Besides, we have demonstrated a contact resistance of ∼19.60 kΩ and a Schottky barrier height of ∼0.37 eV present at W/ZnO NW interfaces. The contact resistance between two overlapped ZnO NWs was estimated to be ∼283 kΩ, which is relatively higher than that offered between W/ZnO NWs. This work provides a solid experimental procedure to address true intrinsic electrical properties at metal/semiconductor interfaces, and our findings have potential applications in next-generation 3D suspended ZnO NW-based nanoelectronic devices.

The Research on Suspended Zno Nanowire Field-Effect Transistor

ZnO Nanofiber Field‐Effect Transistor Assembled by Electrospinning

The Electrical Characterization of Single ZnO Nanowries Field-Effect Transistors

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Electrical and Optical Properties of Single As-Doped Zno Nanowire Field Effect Transistors

Fabrication and I-V Characteristics of Zno Nanowire-Based Field Effect Transistors

Fabrication and Optoelectronic Characterization of Suspended In2O3 Nanowire Transistors

Fabrication and Electrical Property of Individual ZnO Nanowire Based Mesfet

Photoelectric Characteristics of Single ZnO Nanowire Field Effect Transistor

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

Comparison Of The Hydrothermal And Vpt Grown Zno Nanowire Field Effect Transistors

ZnO Nanowire Network Transistors Based on a Self-Assembly Method

Characterization of ZnO Nanowire Field-Effect Transistors Exposed to Ultraviolet Radiation

Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties

Contact printing of horizontally aligned Zn2GeO4 and In2Ge2O7 nanowire arrays for multi-channel field-effect transistors and their photoresponse performances

High-Performance Zno Nanowire Field-Effect Transistor With Forming Gas Treated Sio2 Gate Dielectrics

Synthesis and Electrical Properties of ZnO Nanowires

Electrical properties of a single Ni-contact SnO2 nanowire field-effect transistors

Nanowire Field-Effect Transistor with Bi1.5Zn1.0Nb1.5O7 Dielectric

Electrospun P-Type Nickel Oxide Semiconducting Nanowires for Low-Voltage Field-Effect Transistors

Three-dimensional Vertical ZnO Transistors with Suspended Top Electrodes Fabricated by Focused Ion Beam Technology