Abstract:Ultrathin catalytical silicon nanowires (SiNWs), grown as orderly arrays upon glass substrates, are ideal 1D channels for the construction of high-performance field effect transistors for low-power and high aperture/transparency electronics. In this work, a rather uniform growth integration of high-density ultrathin SiNWs has been accomplished directly on glass substrate at 290 degrees C, via an in-plane solid-liquid-solid mechanism. The indium (In) catalyst thickness deposited on the dense guiding terrace steps was identified as a key parameter to suppress the size dispersion of the In droplets, and thus enable a uniform growth of ultrathin SiNWs with diameters down to D-NW=21.8 +/- 1.8 nm, a close-to-unity guided growth rate and an excellent transparency > 90 % in spectrum ranging from 350 nm to 950 nm. Based on a convenient dry plasma etching and low-temperature passivation procedure, high-performance SiNW transistors have been successfully fabricated upon a dense array of parallel SiNWs as channels with a narrow NW-to-NW spacing of 100 nm. A high current ratio I-on/I-off > 10(7), a low off-state current down to 0.1 pA, a steep subthreshold swing of SS similar to 120 mV dec(-1) and excellent positive and negative bias stabilities have been demonstrated, as well as SiNW-based inverter logics that achieve a gain of 14.6 V/V under a drive voltage of 2.25 V. These results highlight the potential of catalytic SiNWs to serve as advantageous 1D channels for large-area display or transparent electronics.

In-Plane-Gate Transparent $\hbox{sno}_{2}$ Nanowire Transistors

Ultralow-Voltage Transparent $\hbox{in}_{2} \hbox{o}_{3}$ Nanowire Electric-Double-Layer Transistors

Low-Voltage Transparent Sno2 Nanowire Transistors Gated by Microporous Sio2 Solid-Electrolyte with Improved Polarization Response

Ultra Low-Voltage Electric Double-Layer Sno2 Nanowire Transistors Gated by Microporous Sio2-Based Solid Electrolyte

High-Mobility Transparent Thin-Film Transistors with an Sb-Doped Sno2 Nanocrystal Channel Fabricated at Room Temperature

Transparent $\hbox{sno}_{2}$ Nanowire Electric-Double-Layer Transistors with Different Antimony Doping Levels

Fully Transparent Thin-Film Transistor Devices Based on Sno2 Nanowires

Low-Voltage Sno2 Nanowire Transistors Gated by Solution-Processed Chitosan-Based Proton Conductors

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Junctionless In-Plane-gate Transparent Thin-Film Transistors

Low-voltage Transparent Electric-Double-layer ZnO-based Thin-Film Transistors for Portable Transparent Electronics

Nanowire Field-Effect Transistor with Bi1.5Zn1.0Nb1.5O7 Dielectric

High-density Integration of Uniform Sub-22 Nm Silicon Nanowires for Transparent Thin Film Transistors on Glass

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Transparent Metallic Sb-Doped Sno2 Nanowires

Nanotube and Nanowire Transistors

Thin Film Transistors Fabricated by in Situ Growth of SnO2 Nanobeltson Au∕Pt Electrodes

Transparent metallic Sb-doped nanowires

Zinc Oxide Nanowire Networks for Macroelectronic Devices

Low-voltage ZnO thin-film transistors operating at 2.0 V gated with mesoporous SiO2 dielectric processed at room-temperature

Fabrication and performance of indium oxide based transparent thin film transistors